MMBTA94 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBTA94
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 400 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar MMBTA94
MMBTA94 Datasheet (PDF)
mmbta94.pdf
UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES 3* Collector-Emitter Voltage: V = -400V CEO* Collector Dissipation: P = 350mW C(MAX)* Low Collector-Emitter Saturation Voltage 1 APPLICATIONS 2SOT-23* Telephone Switching (JEDEC TO-236)* High Voltage Switch ORDERING INFORMATION Pin Assignment Ordering Num
mmbta94.pdf
MMBTA94 PNP Silicon -400V, -0.1A, 350mW Elektronische Bauelemente Epitaxial Transistor RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High Voltage Transistor AL 33Top View C BMARKING 11 2Product Marking Code2K EMMBTA44 4DDH JF GSYMBOL Millimeter MillimeterREF. REF. Collector Min. Max. Min.
mmbta94.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate TransistorsMMBTA94 TRANSISTOR (PNP) SOT23 FEATURES High Breakdown Voltage MARKING:4D MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -400 V 3. COLLECTOR V Collector-Emitter Voltage -400 V CEOV Emitte
mmbta94.pdf
MMBTA94TRANSISTOR(PNP)SOT23 FEATURES High Breakdown Voltage MARKING:4D 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR VCBO Collector-Base Voltage -400 V V Collector-Emitter Voltage -400 V CEOV Emitter-Base Voltage -5 V EBOI Collector Current -200 mA CI Collector Current -Pulsed -300 mA C
mmbta94.pdf
Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMA94MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit VCEO -400 VCollector-Emitter Voltage -Collec
mmbta94.pdf
MMBTA94COLLECTORHigh-Voltage PNP Transistor Surface Mount 3SOT-233P b Lead(Pb)-Free1BASE12 2EMITTERMaximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V -400 VdcCEOCollector-Base Voltage VCBO -400 VdcEmitter-Base Voltage VEBO -6.0 VdcCollector Current-Continuous ICmAdc-150Thermal CharacteristicsCharacteristics Symbol Max UnitMaximum Power
mmbta94.pdf
MMBTA94 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features ,High voltage, low saturation voltage. / Applications High voltage control circuit. / Equivalent Circuit
mmbta94.pdf
SEMICONDUCTORMMBTA94TECHNICAL DATAPNP EPITAXIAL PLANAR TRANSISTOR3We declare that the material of product2compliance with RoHS requirements.1DescriptionSOT23The MMBTA94 is designed for application that requires high voltage.COLLECTORFeatures3 High Breakdown Voltage: VCEO=400(Min.) at IC=1mA 1BASEDEVICE MARKING2MMBTA94LT1G = 4ZEMITTERAbsolute
mmbta94.pdf
SMD Type TransistorsPNP TransistorsMMBTA94 (KMBTA94) 3 Features High Breakdown Voltage Complement to MMBTA4412 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter Voltage VCEO -40
mmbta94.pdf
MMBTA94TRANSISTOR (PNP) SOT23 FEATURES High Breakdown Voltage MARKING:4D MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -400 V 3. COLLECTOR V Collector-Emitter Voltage -400 V CEOV Emitter-Base Voltage -5 V EBOI Collector Current -Continuous -200 mA CI Collector Current -Pulsed
mmbta94.pdf
MMBTA94PNP TransistorFeaturesSOT-23 For high voltage switching and amplifier applications The transistor is subdivided into one group according to its DCcurrent gain.1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings (Ta=25)Parameter Symbol Value UnitsCollector Base Voltage -V 400 VCBOCollector Emitter Voltage -V 400 VCEOEmitter Base Voltage -V 6 VEBOC
mmbta94.pdf
MMBTA94 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBTA44 ; Complementary to MMBTA44 350mW; Power Dissipation of 350mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package
mmbta94.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBTA94FEATURES MAXIMUM RATINGS Characteristic Symbol Rating Unit V -400 VCollector-Emitter Voltage - CEOCollector-Base Voltage - V -400 VCBOEmitter-Base Voltage V -7 V
mmbta94.pdf
MMBTA94BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to MMBTA44 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)A
mmbta94lt1.pdf
FM120-M WILLASTHRUMMBTA94LT1PNP EPITAXIAL PLANAR BARRIER RECTIFIERS -20V- 200VTRANSISTORFM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent poweWe declare that the material of producter dissipation offers better reverse leakage current and th rmal resistance.SOD-123Hcompliance with RoHS re
mmbta94t.pdf
MMBTA94T Rev.E Mar.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features High voltage. / Applications High voltage control circuit. / Equivalent Circuit / Pinning 1 2 3 PIN1Base
mmbta94-ms.pdf
www.msksemi.comMMBTA94-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (PNP)FEATURES High Breakdown Voltage1. BASEMARKING:4D2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -400 V CBOV Collector-Emitter Voltage -400 V CEOV Emitter-Base Voltage -5 V EBOI Co
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N4854U | 2N4911X
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050