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MMBTA94 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBTA94
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.35 W
   Tensión colector-base (Vcb): 400 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar MMBTA94

 

MMBTA94 Datasheet (PDF)

 ..1. Size:126K  utc
mmbta94.pdf

MMBTA94 MMBTA94

UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES 3* Collector-Emitter Voltage: V = -400V CEO* Collector Dissipation: P = 350mW C(MAX)* Low Collector-Emitter Saturation Voltage 1 APPLICATIONS 2SOT-23* Telephone Switching (JEDEC TO-236)* High Voltage Switch ORDERING INFORMATION Pin Assignment Ordering Num

 ..2. Size:277K  secos
mmbta94.pdf

MMBTA94 MMBTA94

MMBTA94 PNP Silicon -400V, -0.1A, 350mW Elektronische Bauelemente Epitaxial Transistor RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High Voltage Transistor AL 33Top View C BMARKING 11 2Product Marking Code2K EMMBTA44 4DDH JF GSYMBOL Millimeter MillimeterREF. REF. Collector Min. Max. Min.

 ..3. Size:2291K  jiangsu
mmbta94.pdf

MMBTA94 MMBTA94

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate TransistorsMMBTA94 TRANSISTOR (PNP) SOT23 FEATURES High Breakdown Voltage MARKING:4D MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -400 V 3. COLLECTOR V Collector-Emitter Voltage -400 V CEOV Emitte

 ..4. Size:1578K  htsemi
mmbta94.pdf

MMBTA94 MMBTA94

MMBTA94TRANSISTOR(PNP)SOT23 FEATURES High Breakdown Voltage MARKING:4D 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR VCBO Collector-Base Voltage -400 V V Collector-Emitter Voltage -400 V CEOV Emitter-Base Voltage -5 V EBOI Collector Current -200 mA CI Collector Current -Pulsed -300 mA C

 ..5. Size:236K  gsme
mmbta94.pdf

MMBTA94 MMBTA94

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMA94MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit VCEO -400 VCollector-Emitter Voltage -Collec

 ..6. Size:619K  wietron
mmbta94.pdf

MMBTA94 MMBTA94

MMBTA94COLLECTORHigh-Voltage PNP Transistor Surface Mount 3SOT-233P b Lead(Pb)-Free1BASE12 2EMITTERMaximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V -400 VdcCEOCollector-Base Voltage VCBO -400 VdcEmitter-Base Voltage VEBO -6.0 VdcCollector Current-Continuous ICmAdc-150Thermal CharacteristicsCharacteristics Symbol Max UnitMaximum Power

 ..7. Size:977K  blue-rocket-elect
mmbta94.pdf

MMBTA94 MMBTA94

MMBTA94 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features ,High voltage, low saturation voltage. / Applications High voltage control circuit. / Equivalent Circuit

 ..8. Size:114K  first silicon
mmbta94.pdf

MMBTA94 MMBTA94

SEMICONDUCTORMMBTA94TECHNICAL DATAPNP EPITAXIAL PLANAR TRANSISTOR3We declare that the material of product2compliance with RoHS requirements.1DescriptionSOT23The MMBTA94 is designed for application that requires high voltage.COLLECTORFeatures3 High Breakdown Voltage: VCEO=400(Min.) at IC=1mA 1BASEDEVICE MARKING2MMBTA94LT1G = 4ZEMITTERAbsolute

 ..9. Size:173K  kexin
mmbta94.pdf

MMBTA94 MMBTA94

SMD Type TransistorsPNP TransistorsMMBTA94 (KMBTA94) 3 Features High Breakdown Voltage Complement to MMBTA4412 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter Voltage VCEO -40

 ..10. Size:1073K  slkor
mmbta94.pdf

MMBTA94 MMBTA94

MMBTA94TRANSISTOR (PNP) SOT23 FEATURES High Breakdown Voltage MARKING:4D MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -400 V 3. COLLECTOR V Collector-Emitter Voltage -400 V CEOV Emitter-Base Voltage -5 V EBOI Collector Current -Continuous -200 mA CI Collector Current -Pulsed

 ..11. Size:493K  pjsemi
mmbta94.pdf

MMBTA94 MMBTA94

MMBTA94PNP TransistorFeaturesSOT-23 For high voltage switching and amplifier applications The transistor is subdivided into one group according to its DCcurrent gain.1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings (Ta=25)Parameter Symbol Value UnitsCollector Base Voltage -V 400 VCBOCollector Emitter Voltage -V 400 VCEOEmitter Base Voltage -V 6 VEBOC

 ..12. Size:427K  cn salltech
mmbta94.pdf

MMBTA94 MMBTA94

 ..13. Size:944K  cn zre
mmbta94.pdf

MMBTA94 MMBTA94

MMBTA94 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBTA44 ; Complementary to MMBTA44 350mW; Power Dissipation of 350mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

 ..14. Size:235K  cn fosan
mmbta94.pdf

MMBTA94 MMBTA94

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBTA94FEATURES MAXIMUM RATINGS Characteristic Symbol Rating Unit V -400 VCollector-Emitter Voltage - CEOCollector-Base Voltage - V -400 VCBOEmitter-Base Voltage V -7 V

 ..15. Size:710K  cn hottech
mmbta94.pdf

MMBTA94 MMBTA94

MMBTA94BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to MMBTA44 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)A

 0.1. Size:381K  willas
mmbta94lt1.pdf

MMBTA94 MMBTA94

FM120-M WILLASTHRUMMBTA94LT1PNP EPITAXIAL PLANAR BARRIER RECTIFIERS -20V- 200VTRANSISTORFM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent poweWe declare that the material of producter dissipation offers better reverse leakage current and th rmal resistance.SOD-123Hcompliance with RoHS re

 0.2. Size:939K  blue-rocket-elect
mmbta94t.pdf

MMBTA94 MMBTA94

MMBTA94T Rev.E Mar.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features High voltage. / Applications High voltage control circuit. / Equivalent Circuit / Pinning 1 2 3 PIN1Base

 0.3. Size:4243K  msksemi
mmbta94-ms.pdf

MMBTA94 MMBTA94

www.msksemi.comMMBTA94-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (PNP)FEATURES High Breakdown Voltage1. BASEMARKING:4D2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -400 V CBOV Collector-Emitter Voltage -400 V CEOV Emitter-Base Voltage -5 V EBOI Co

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

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History: 2N4854U | 2N4911X

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