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S8550 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: S8550

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 150 MHz

Ganancia de corriente contínua (hfe): 120

Empaquetado / Estuche: SOT23

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S8550 Datasheet (PDF)

0.1. ss8550.pdf Size:347K _fairchild_semi

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S8550

March 2008SS85502W Output Amplifier of Portable Radios in Class B Push-pull OperationFeatures Complimentary to SS8050 Collector Current: IC=1.5A Collector Power Dissipation: PC=1W (TC=25C)TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-

0.2. ss8550.pdf Size:64K _samsung

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SS8550 PNP EPITAXIAL SILICON TRANSISTOR2W OUTPUT AMPLIFIER OF PORTABLETO-92RADIOS IN CLASSB PUSH-PULL OPERATION. Complimentary to SS8050 Collector Current IC= -1.5A Collector Dissipation:PC=2W (TC=25 )ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -25 VEmitter-Base Voltage VEB

 0.3. mmss8550w-j.pdf Size:187K _mcc

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MMSS8550W-LMCCMicro Commercial Components MMSS8550W-HTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311MMSS8550W-JPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF"PNP Silicon Case Material:Molded Plastic. UL FlammabilityClassificatio Rating 94-0 and MSL Rating 1 Marking:Y2 Plasti

0.4. ss8550-c-d.pdf Size:196K _mcc

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MCCSS8550-CTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsSS8550-DCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25OC) of Power Dissipation.PNP Silicon Collector-current 1.5A Collector-base Voltage 40VTransistors Operating and storage

 0.5. s8550b s8550c s8550d.pdf Size:177K _mcc

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S8550-BMCCMicro Commercial ComponentsTMS8550-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311S8550-DPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.PNP Silicon Collector-current 0.5A Collector-base Voltage 40VTransistors Operating a

0.6. mms8550-l.pdf Size:183K _mcc

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MCCMMS8550-LTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsMMS8550-HCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Capable of 0.3Watts(Tamb=25OC) of Power Dissipation.Plastic-Encapsulate Collector-

0.7. mmss8550-h.pdf Size:153K _mcc

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MCCMMSS8550-LMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsMMSS8550-HCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesPNP Silicon Case Material:Molded Plastic. UL FlammabilityClassificatio Rating 94-0 and MSL Rating 1 Marking:Y2 Plastic-Encapsulate Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.Tra

0.8. mms8550-h.pdf Size:183K _mcc

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MCCMMS8550-LTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsMMS8550-HCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Capable of 0.3Watts(Tamb=25OC) of Power Dissipation.Plastic-Encapsulate Collector-

0.9. mmss8550-l.pdf Size:153K _mcc

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MCCMMSS8550-LMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsMMSS8550-HCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesPNP Silicon Case Material:Molded Plastic. UL FlammabilityClassificatio Rating 94-0 and MSL Rating 1 Marking:Y2 Plastic-Encapsulate Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.Tra

0.10. mmss8550w-h.pdf Size:187K _mcc

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MMSS8550W-LMCCMicro Commercial Components MMSS8550W-HTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311MMSS8550W-JPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF"PNP Silicon Case Material:Molded Plastic. UL FlammabilityClassificatio Rating 94-0 and MSL Rating 1 Marking:Y2 Plasti

0.11. mmss8550w-l.pdf Size:187K _mcc

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MMSS8550W-LMCCMicro Commercial Components MMSS8550W-HTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311MMSS8550W-JPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF"PNP Silicon Case Material:Molded Plastic. UL FlammabilityClassificatio Rating 94-0 and MSL Rating 1 Marking:Y2 Plasti

0.12. s8550.pdf Size:138K _utc

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UNISONIC TECHNOLOGIES CO., LTD S8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC S8550 is a low voltage high current small signal PNP 1transistor, designed for Class B push-pull audio amplifier and TO-92general purpose applications. FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V

0.13. sps8550.pdf Size:187K _auk

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SPS8550Semiconductor Semiconductor PNP Silicon TransistorFeatures Suitable for low voltage large current drivers High DC current gain and large current capability Complementary pair with SPS8050 Ordering Information Type NO. Marking Package Code SPS8550 SPS8550 TO-92 Outline Dimensions unit : mm 1 2 3 PIN Connections 1. Emitter 2. Base 3. Collecto

0.14. sts8550.pdf Size:96K _auk

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STS8550SemiconductorSemiconductorPNP Silicon TransistorDescriptions High current application Radio in class B push-pull operationFeature Complementary pair with STS8050Ordering InformationType NO. Marking Package Code STS8550 STS8550 TO-92Outline Dimensions unit : mm3.450.14.50.12.250.10.40.022.060.11.27 Typ.2.54 Typ.1 2 3PIN Conn

0.15. ss8550.pdf Size:329K _secos

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SS8550 PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free Collector3FEATURES SOT-23 Power dissipation Collector31Dim Min MaxPCM : 0.3 W BaseA 2.800 3.0401BaseB 1.200 1.4002 Collector Current EmitterC 0.890 1.1102ICM : - 1.5 A D 0.370 0.500EmitterG 1.780 2

0.16. s8550.pdf Size:196K _secos

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S8550PNP SiliconElektronische BauelementePlastic-Encapsulate TransistorsRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeFEATURES SOT-23Dim Min MaxCollector3A 2.800 3.040Complimentary to S8050B 1.200 1.4001BaseC 0.890 1.1102EmitterCollector Current: IC=0.5AD 0.370 0.500G 1.780 2.040AH 0.013 0.100LJ 0.085 0.1773K 0.450 0.60

0.17. ss8550t.pdf Size:105K _secos

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SS8550TPNP SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-92FEATURESPower dissipationPCM : 1 WCollector CurrentICM : -1.5 A1Collector-base voltage 23V(BR)CBO : - 40 V12 3Operating & storage junction temperature1O OTj, Tstg : - 55 C ~ + 150 C1. EMITTER22. BASS3 . COL

0.18. s8550t.pdf Size:343K _secos

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S8550T PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free TO-924.55 0.2 3.5 0.2 (1.27 Typ.)FEATURES 1.25 0.21 2 3 Excellent hFE linearity 2.54 0.11: Emitter2: Base3: Collector 0.080.43 0.070.46 0.1ABSOLUTE MAXIMUM RATINGS at Ta = 25C Parameter Symbol Ratings Unit

0.19. ss8550w.pdf Size:115K _secos

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SS8550WPNP SiliconElektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductSOT-323FEATURESCollectorDim Min Max33A 1.800 2.200Power dissipation11 B 1.150 1.3502 BasePCM : 0.2 WC 0.800 1.000Collector CurrentD 0.300 0.4002ICM : -1.5 A A G 1.200 1.400EmitterLH 0.000 0.100Collector-base voltageJ 0.100 0.2503V(BR)CBO : - 40 VS

0.20. mps8550s.pdf Size:390K _kec

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SEMICONDUCTOR MPS8550STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. FEATUREEL B LComplementary to MPS8050S.DIM MILLIMETERS_A 2.93 0.20+B 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201MAXIMUM RATING (Ta=25 ) G 1.90H 0.95J 0.13+0.10/-0.05CHARACTERISTIC SYMBOL RATING UNITK 0.00 ~ 0.10L 0.55VCBO -40 VCollecto

0.21. mps8550sc.pdf Size:603K _kec

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SEMICONDUCTOR MPS8550SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. FEATUREComplementary to MPS8050SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -40 VCollector-Base VoltageVCEO -25 VCollector-Emitter VoltageVEBOEmitter-Base Voltage -5 VICCollector Current -1,200 mAPC *Collector Power Dissipation 350 mWTjJunctio

0.22. mps8550.pdf Size:45K _kec

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SEMICONDUCTOR MPS8550TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. B CFEATUREComplementary to MPS8050.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGMAXIMUM RATING (Ta=25)C 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBO -40 VCollector-Base VoltageG 0.85H 0.45VCEO -25 VCollector-Emitter Voltage _HJ 14.0

0.23. ss8550b.pdf Size:797K _htsemi

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SS8 550TRANSISTOR(PNP)SOT-323 FEA TURES Complimentary to SS8050 1. Base MARKING: Y2 2. Emitter 3. Collector MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.2 W

0.24. s8550.pdf Size:978K _htsemi

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S8 550S901 2SOT-23 TRANSISTOR(PNP)FEATURES Complimentary to S8050 1. BASE Collector current: IC=0.5A 2. EMITTER 3. COLLECTOR MARKING : 2TY MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A

0.25. s8550a.pdf Size:292K _gsme

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Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM8550FEATURESFEATURES FEATURESLow Frequency Power Amplifier Suitable for Driver Stage lf Small Motor Complementary to GM8050 GM8050 (Ta=25 )

0.26. ss8550.pdf Size:292K _gsme

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Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM8550FEATURESFEATURES FEATURESLow Frequency Power Amplifier Suitable for Driver Stage lf Small Motor Complementary to GM8050 GM8050 (Ta=25 )

0.27. s8550.pdf Size:292K _gsme

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Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM8550FEATURESFEATURES FEATURESLow Frequency Power Amplifier Suitable for Driver Stage lf Small Motor Complementary to GM8050 GM8050 (Ta=25 )

0.28. ss8550 sot-23.pdf Size:242K _lge

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SS8550 SOT-23 Transistor(PNP)SOT-231. Base 2.Emitter 3.Collector FeaturesComplimentary to SS8050 MARKING: Y2 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A

0.29. s8550 sot-23.pdf Size:217K _lge

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S8550 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8050 Collector current: IC=0.5A MARKING : 2TY Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC C

0.30. ss8550 to-92.pdf Size:177K _lge

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SS8550(PNP)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PC : 1 W (TA=25) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)IC Collector Curren

0.31. s8550 to-92.pdf Size:180K _lge

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S8550(PNP)TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Excellent hFE linearity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units -40 VVCBO Collector-Base Voltage VCEO Collector-Emitter Voltage -25 VVEBO Emitter-Base Voltage -5 VIC Collector Current -Continuous -500 mA Dimensions in inches and (millimeters)

0.32. ss8550.pdf Size:166K _wietron

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SS8550Plastic-Encapsulate TransistorsTO-92PNP Silicon COLLECTOR32BASE11. EMITTER 2312. BASEEMITTER3. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating Symbol SS8550UnitCollector-Emitter Voltage VCEO -25 VdcCollector-Base Voltage VCBO -40VdcEmitter-Base Voltage VEBO-5.0 VdcCollector Current IC-1.5 AdcTotal Device Dissipation T =25 C PD WA 1.0

0.33. s8550.pdf Size:1656K _wietron

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S8550PNP General Purpose TransistorsTO-92P b Lead(Pb)-Free1. E MIT T E R122. B A SE33. COL L E CTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-E m itter Voltage VCE O -2 5 VdcCollector-B as e Voltage VCB O -4 0VdcE m itter-B as e VOltage VE B O-5 . 0 VdcCollector Current IC-5 0 0 mAdcP 0 . 6 2 5Total Device Dis s ipation T =2 5

0.34. ss8550lt1.pdf Size:165K _wietron

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SS8550LT1PNP General Purpose Transistors31P b Lead(Pb)-Free2SOT-23ValueVCEO-25-40-5.0-15003002.4 417-0.1-25-40-100-5.0-100-0.15 u-40-0.15 u-5.0WEITRON27-Jul-20121/2http://www.weitron.com.twSS8550LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Max UnitMinON CHARACTERISTICSDC

0.35. ss8550w.pdf Size:264K _wietron

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SS8550WPNP Plastic-Encapsulate Transistor3P b Lead(Pb)-Free12MAXIMUM RATINGS (TA=25 unless otherwise noted)1. BASESymbol Parameter Value Units2. EMITTER3. COLLECTORV(BR)CBO Collector- Base Voltage -40 VICM Collector Current -1.5 ASOT-323(SC-70).PCM Power Dissipation (Tamb=25C) W0.2TJ Junction Temperature -55 to +150 Tstg Storage Temperature -55 to +15

0.36. s8550lt1.pdf Size:361K _shenzhen

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550LT1 TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM: 0.3 W (Tamb=25) 1. 3 Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Unit: mm Operating and storage junction temperature range TJ, Tst

0.37. ss8550.pdf Size:401K _shenzhen

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation PCM : 1 W (TA=25) 3. COLLECTOR : 2 W (TC=25) 1 2 3 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value UnitsCollector-Base Voltage VCBO -40 VCollector-Emitter Voltag

0.38. s8550.pdf Size:147K _shenzhen

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) TO-92 FEATURE Power dissipation 1. EMITTER PCM: 0.625 W (Tamb=25) 2. BASE Collector current 3. COLLECTOR ICM: -0.5 A Collector-base voltage 1 2 3 V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55 to +150

0.39. ss8550lt1.pdf Size:975K _shenzhen

S8550

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SS8550LT1 TRANSISTOR (PNP) SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 3. COLLECTOR PCM: 0.2 W (Tamb=25) Collector current ICM: -1.5 A Collector-base voltage V(BR)CBO: -25 V Operating and storage junction temperature range TJ, Tstg: -55to +150 ELE

0.40. ss8550.pdf Size:284K _can-sheng

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TO-92 Plastic-Encapsulate TransistorsFEATURESTO-92Power dissipationPC : 1 W (TA=25)1.EMITTERMAXIMUM RATINGS (TA=25 unless otherwise noted)2.BASE1 2 3Symbol Parameter Value UnitsSymbol Parameter Value UnitsSymbol Parameter Value UnitsSymbol Parameter Value Units3.COLLECTORVCBO -40 VVCBOVCBO Collector-Base VoltageVCBOELECTRICALELECTRICALELECTRICALEL

0.41. ss8550 y2 sot-23.pdf Size:508K _can-sheng

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ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) FEATURES Complimentary to SS8050 MARKING: Y2 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base

0.42. s8550 sot-23.pdf Size:274K _can-sheng

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ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) FEATURES Complimentary to S8050 Collector current:Ic=0.5A MARKING:2TY MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units

0.43. s8550 to-92.pdf Size:266K _can-sheng

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ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-92 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) FEATURES Excellent Hfe linearity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

0.44. s8550a.pdf Size:444K _blue-rocket-elect

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S8550

S8550A(BR3CG8550AK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features PC, IC , S8050A(BR3DG8050AK) High PC and IC, complementary pair with S8050A(BR3DG8050AK). / Applications Amplifier of portable radios in class B pu

0.45. s8550w.pdf Size:904K _blue-rocket-elect

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S8550

S8550W(BR3CG8550W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 PNP Silicon PNP transistor in a SOT-323 Plastic Package. / Features S8050W(BR3CG8050W)Complementary pair with S8050W(BR3CG8050W). / Applications Power amplifier applications. / Equivalent Cir

0.46. s8550m.pdf Size:660K _blue-rocket-elect

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S8550

S8550M(BR3CG8550M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features S8050M(BR3DG8050M)Complementary pair with S8050M(BR3DG8050M). / Applications Power amplifier applications. / Equivalent Circu

0.47. s8550g.pdf Size:824K _first_silicon

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S8550GPlastic-Encapsulate TransistorsSimplified outlineS8550G TRANSISTOR NPN TO-92Features Power dissipation 1.EMITTER PCM : 0.625 WTamb=25 Collector current 2. COLLECTOR ICM : -0.5 A 3.BASE Collector-base voltage 123 V(BR)CBO : -40 V Operating and storage junction temperature range TJTstg: -55 to +150 Electrical Characteristic

0.48. ss8550g.pdf Size:1061K _first_silicon

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SS8550GPlastic-Encapsulate Transistors Simplified outlineSS8550G TRANSISTOR NPN TO-92Features Power dissipation 1.EMITTER PC : 1 W (Ta=25 ) 2.BASE 3.COLLECTOR123 Maximum Ratings(Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Coll

0.49. 3cg8550m s8550m.pdf Size:136K _foshan

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S8550

S8550M(3CG8550M) PNP /SILICON PNP TRANSISTOR :/Purpose: Power amplifier applications. : S8050M(3DG8050M)/Features: Complementary pair with S8050M(3DG8050M). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -40 V CBO V -25 V CEO V -6.0 V EBO I -800 mA

Otros transistores... MMBT589 , MMBTA44 , MMBTA94 , PXT3904 , PXT3906 , PXT8050 , PXT8550 , S8050 , S9014 , S9012 , S9013 , S9013W , S9014 , S9014W , S9015 , S9015W , S9018 .

 

 
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