STD123S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STD123S NPN Silicon Transistor Features Low saturation medium current application Extremely low collector saturation voltage COLLECTOR3 Suitable for low voltage large current drivers 3 High DC current gain and large current capability 1 Low on resistance : R =0.6(Max.) (I =1mA) ON BBASEOrdering Information 2EMITTERPart Number Marking P

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors STD123S TRANSISTOR (NPN)SOT-23 FEATURES Low saturation medium current application1. BASE Extremely low collector saturation voltage2. EMITTER Suitable for low voltage large current drivers3. COLLECTOR High DC current gain and large current capability Low on resistance : RON=0.6(M

STD1 23STRANSISTOR(NPN)SOT-23 FEATURES Low saturation medium current application 1. BASE Extremely low collector saturation voltage 2. EMITTER Suitable for low voltage large current drivers 3. COLLECTOR High DC current gain and large current capability Low on resistance : RON=0.6(Max.) (IB=1mA) Marking:123 MAXIMUM RATINGS (TA=25 unless otherwise noted)

STD123S SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6(Max.) (IB=1mA) Marking:123 Dimensions in inches and (millimeters)MA

STD123SFSemiconductor Semiconductor NPN Silicon TransistorFeatures Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6(Max.) (IB=1mA) Ordering Information Type NO. Marking Package Code S

STD123UFSemiconductor Semiconductor NPN Silicon TransistorFeatures Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6(Max.) (IB=1mA) Ordering Information Type NO. Marking Package Code S

STD123ASNPN Silicon TransistorPIN ConnectionFeatures High & low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA Suitable for large current drive directly. Application for IRED Drive transistor in remote transmitter. SOT-23 Ordering Information Type NO. Marking Package Code 12A STD123AS SOT-23 Device Code Year&Week Co

STD123ASFNPN Silicon TransistorFeatures PIN Connection High & low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA Suitable for large current drive directly. 3 Application for IRED Drive transistor in remote transmitter. 1 2 SOT-23F Ordering Information Type NO. Marking Package Code 12A STD123ASF SOT-23F Device Code

STD123UNPN Silicon TransistorFeatures PIN Connection Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability 3 Low on resistance : RON=0.6(Max.) (IB=1mA) 1 2SOT-323 Ordering Information Type NO. Marking Package Cod

STD123NPN Silicon TransistorFeatures PIN Connection Low saturation medium current application C Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability B Low on resistance : RON=0.6(Max.) (IB=1mA) E TO-92 Ordering Information Type NO. Marking Package Code