SC116 Todos los transistores

 ..1. Size:123K  gdr
 bsy34 sc116 sc117 sc118 sc119 sc206 sc207 sc236 sc237 sc238 sc239 sc307 sc308 sc309.pdf

 0.1. Size:63K  toshiba
 2sc1169.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 0.2. Size:29K  hitachi
 2sc1162.pdf

2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 5V Collector current IC 2.5 A Collector peak current

 0.3. Size:49K  no
 2sc1166.pdf

 0.4. Size:392K  secos
 2sc1162.pdf

2SC1162 2.5A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-126 Low frequency power amplifier Emitter Collector Base CLASSIFICATION OF hFE (1) Product-Rank 2SC1162-B 2SC1162-C 2SC1162-D A B E Range 60 120 100 200 160 320 F C N H L M K D J G

 0.5. Size:205K  cdil
 csc1162.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Package CSC1162 CSC1162 NPN PLASTIC POWER TRANSISTOR Complementary CSA715 Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ALL DIMENSIONS IN MM ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE

 0.6. Size:267K  jiangsu
 2sc1162.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SC1162 TRANSISTOR (NPN) TO-126 FEATURES 1. EMITTER Low Frequency Power Amplifier 2. COLLECOTR 3. BASE Equivalent Circuit C1162=Device code Solid dot = Green molding compound device, if none, the normal device C1162 XX XX=Code ORDERING INFORMATION Part Number Package

 0.7. Size:172K  jmnic
 2sc1162.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC1162 DESCRIPTION With TO-126 package Complement to type 2SA715 APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base

 0.8. Size:180K  lge
 2sc1162.pdf

2SC1162(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECOTR 3. BASE 3 2 1 Features 2.500 7.400 Low frequency power amplifier 2.900 1.100 7.800 1.500 3.900 3.000 4.100 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.200 10.600 Symbol Parameter Value Units 0.000 11.000 0.300 VCBO Collector-Emitter Voltage 35 V VCEO Collector-Emitter Voltage 35 V 2.100

 0.9. Size:214K  inchange semiconductor
 2sc1162.pdf

isc Silicon NPN Power Transistor 2SC1162 DESCRIPTION High Collector Current I = 2.5A C Collector-Emitter Breakdown Voltage- V = 35V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage Complement to Type 2SA715 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier a

 0.10. Size:181K  inchange semiconductor
 2sc1161.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1161 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for low frequency high voltage power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 0.11. Size:182K  inchange semiconductor
 2sc1163.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1163 DESCRIPTION High Collector Current I = 0.1A C Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for low frequency power amplifier appl