SC116 Specs and Replacement
Type Designator: SC116
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Collector Current |Ic max|: 0.1 A
Electrical Characteristics
Transition Frequency (ft): 90 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO18
- BJT ⓘ Cross-Reference Search
SC116 datasheet
0.1. Size:63K toshiba
2sc1169.pdf 

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
0.2. Size:29K hitachi
2sc1162.pdf 

2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 5V Collector current IC 2.5 A Collector peak current... See More ⇒
0.4. Size:392K secos
2sc1162.pdf 

2SC1162 2.5A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-126 Low frequency power amplifier Emitter Collector Base CLASSIFICATION OF hFE (1) Product-Rank 2SC1162-B 2SC1162-C 2SC1162-D A B E Range 60 120 100 200 160 320 F C N H L M K D J G ... See More ⇒
0.5. Size:205K cdil
csc1162.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Package CSC1162 CSC1162 NPN PLASTIC POWER TRANSISTOR Complementary CSA715 Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ALL DIMENSIONS IN MM ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE ... See More ⇒
0.6. Size:267K jiangsu
2sc1162.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SC1162 TRANSISTOR (NPN) TO-126 FEATURES 1. EMITTER Low Frequency Power Amplifier 2. COLLECOTR 3. BASE Equivalent Circuit C1162=Device code Solid dot = Green molding compound device, if none, the normal device C1162 XX XX=Code ORDERING INFORMATION Part Number Package ... See More ⇒
0.7. Size:172K jmnic
2sc1162.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC1162 DESCRIPTION With TO-126 package Complement to type 2SA715 APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base... See More ⇒
0.8. Size:180K lge
2sc1162.pdf 

2SC1162(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECOTR 3. BASE 3 2 1 Features 2.500 7.400 Low frequency power amplifier 2.900 1.100 7.800 1.500 3.900 3.000 4.100 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.200 10.600 Symbol Parameter Value Units 0.000 11.000 0.300 VCBO Collector-Emitter Voltage 35 V VCEO Collector-Emitter Voltage 35 V 2.100... See More ⇒
0.9. Size:214K inchange semiconductor
2sc1162.pdf 

isc Silicon NPN Power Transistor 2SC1162 DESCRIPTION High Collector Current I = 2.5A C Collector-Emitter Breakdown Voltage- V = 35V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage Complement to Type 2SA715 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier a... See More ⇒
0.10. Size:181K inchange semiconductor
2sc1161.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1161 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for low frequency high voltage power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒
0.11. Size:182K inchange semiconductor
2sc1163.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1163 DESCRIPTION High Collector Current I = 0.1A C Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for low frequency power amplifier appl... See More ⇒
Detailed specifications: S9014, S9014W, S9015, S9015W, S9018, S9018W, SS8550B, STD123S, 2N3906, SC117, SC118, SC119, SC206, SC207, SC236, SC237, SC238
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