SC117 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SC117

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.75 W

Tensión colector-emisor (Vce): 30 V

Corriente del colector DC máxima (Ic): 0.1 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 90 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO18

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SC117 datasheet

 0.1. Size:93K  toshiba
2sc1173.pdf pdf_icon

SC117

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 0.2. Size:248K  fairchild semi
ksc1173.pdf pdf_icon

SC117

August 2009 KSC1173 NPN Epitaxial Silicon Transistor Features Low Frequency Power Amplifier, Power Regulator Collector Current IC=3A Collector Dissipation PC=10W (TC=25 C) Complement to KSA473 TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * TA = 25 C unless otherwise noted Symbol Parameter Value Units BVCBO Collector-Base Voltage 30 V BVC

 0.3. Size:1175K  infineon
bsc117n08ns5.pdf pdf_icon

SC117

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 80 V BSC117N08NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 80 V BSC117N08NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re

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