SC117 Todos los transistores

 

SC117 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SC117
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.75 W
   Tensión colector-emisor (Vce): 30 V
   Corriente del colector DC máxima (Ic): 0.1 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 90 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO18
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SC117 Datasheet (PDF)

 0.1. Size:93K  toshiba
2sc1173.pdf pdf_icon

SC117

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 0.2. Size:248K  fairchild semi
ksc1173.pdf pdf_icon

SC117

August 2009KSC1173 NPN Epitaxial Silicon TransistorFeatures Low Frequency Power Amplifier, Power Regulator Collector Current : IC=3A Collector Dissipation : PC=10W (TC=25C) Complement to KSA473TO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings * TA = 25C unless otherwise notedSymbol Parameter Value Units BVCBO Collector-Base Voltage 30 V BVC

 0.3. Size:1175K  infineon
bsc117n08ns5.pdf pdf_icon

SC117

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 80 VBSC117N08NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 80 VBSC117N08NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re

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