SC207 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SC207
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 20 V
Corriente del colector DC máxima (Ic): 0.1 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 300 MHz
Ganancia de corriente contínua (hFE): 5.6
Encapsulados: TO18
Búsqueda de reemplazo de SC207
- Selecciónⓘ de transistores por parámetros
SC207 datasheet
0.1. Size:152K toshiba
2sc2075.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
0.3. Size:111K sanyo
2sc2078.pdf
Ordering number EN462E NPN Epitaxial Planar Silicon Transistor 2SC2078 27MHz RF Power Amplifier Applications Package Dimensions unit mm 2010C [2SC2078] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 80 V Collector-to-Emitter Voltage VCE
0.4. Size:56K fairchild semi
ksc2073.pdf
KSC2073 TV Vertical Deflection Output Complement to KSA940 Collector-Base Voltage VCBO = 150V TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Curre
0.5. Size:52K samsung
ksc2073.pdf
KSC2073 NPN EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT TO-220 Complement to KSA940 Collector-Base Voltage VCBO = 150V ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 5 V Collector Current IC 1.5 A Collector Dissipation ( TC=25 ) PC 25 W Junction T
0.6. Size:275K onsemi
ksc2073.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
0.8. Size:204K cdil
csa940 csc2073.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSA940, CSC2073 CSA940 PNP PLASTIC POWER TRANSISTOR CSC2073 NPN PLASTIC POWER TRANSISTOR Power Amplifier Applications and Vertical Output Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. B E F A 14.42 16.51 B 9.6
0.9. Size:502K jiangsu
2sc2073.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR (NPN) TO-220-3L 1. BASE FEATURES 2. COLLECTOR Wide safe Operating Area. 3. EMITTER Complementary to 2SA940 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Paramenter Value Unit VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150
0.10. Size:218K lge
2sc2073.pdf
2SC2073(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Wide safe Operating Area. Complementary to 2SA940 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Paramenter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC C
0.11. Size:632K semtech
st2sc2073u.pdf
ST 2SC2073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 7 V Collector Current IC 1 A Peak Collector Current (Single pulse, tp = 300 s) ICP 2 A 0.5 Ptot W To
0.13. Size:215K foshan
2sc2073 3da2073.pdf
2SC2073(3DA2073) NPN /SILICON NPN TRANSISTOR Purpose Power amplifier applications, vertical output applications. , 2SA940(3CA940) Features Wide Safe Operating Area, complementary to 2SA940(3CA940). /Absolute maximum ratings(Ta=25 )
0.14. Size:521K slkor
2sc2078b 2sc1815c 2sc1815d 2sc1815e.pdf
2SC2078 Silicon NPN POWER TRANSISTOR DESCRIPTION B F SEATING T PLANE C 4 Designed primarily for SSB linear power T S amplifier applications A Q 1 2 3 H FEATURES U K Z Specified 12.5V, 27MHz Characteristics L PO = 4W PEP V ft = 200 MHz STYLE 1 R G PIN 1. BASE 2. COLLECTOR J D 3. EMITTER N 4. COLLECTOR DIMENSIONS UNIT A B C D F G H J K L N Q R
0.15. Size:1725K jsmsemi
2sc2073.pdf
2SC2073 NPN / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features PIN1 Base , 2SA940 1 PIN 2 Collector 2 3 Wide Safe Operating Area, complementary to 2SA940. PIN 3 Emitter / Applications
0.16. Size:856K cn evvo
2sc2073.pdf
2SC2073 Silicon NPN transistor / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features PIN1 Base , 2SA940 1 PIN 2 Collector 2 3 Wide Safe Operating Area, complementary to 2SA940. PIN 3 Emitter / Applications
0.17. Size:1293K cn sps
2sc2073t1tl.pdf
2SC2073T1TL Silicon NPN Power Transistor DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA940 APPLICATIONS Power amplifier applications. Vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150 V CBO V Collector-Emitter Voltage 150
0.18. Size:421K cn sptech
2sc2073.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2073 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA940 APPLICATIONS Power amplifier applications. Vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150 V CBO
0.19. Size:192K inchange semiconductor
2sc2073.pdf
isc Silicon NPN Power Transistor 2SC2073 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA940 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
0.20. Size:192K inchange semiconductor
2sc2075.pdf
isc Silicon NPN Power Transistor 2SC2075 DESCRIPTION High transition frequency Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS 27MHz Power Amplifier Applications Recommended for output stage application of AM 4W transmitter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect
0.21. Size:186K inchange semiconductor
ksc2073tu.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor KSC2073TU DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type KSA940TU Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Vertical output applications. ABSOLUTE MAXIMUM RATIN
0.22. Size:239K inchange semiconductor
2sc2078.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2078 DESCRIPTION Collector-Emitter Voltage- VCER= 75V(Min) ;RBE=150 Collector Current- IC=3A APPLICATIONS 27MHz RF Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCER Collector-Emitter Voltage RBE=15
Otros transistores... S9018W, SS8550B, STD123S, SC116, SC117, SC118, SC119, SC206, 13003, SC236, SC237, SC238, SC239, SC307, SC308, SC309, SCE237
