All Transistors. SC207 Datasheet

 

SC207 Transistor. Datasheet pdf. Equivalent

Type Designator: SC207

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Collector Current |Ic max|: 0.1 A

Noise Figure, dB: -

SC207 Transistor Equivalent Substitute - Cross-Reference Search

SC207 Datasheet (PDF)

1.1. 2sc2073a_3da2073a.pdf Size:221K _update

SC207
SC207

2SC2073A(3DA2073A) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于功率放大和帧频输出。 Purpose: Power amplifier applications, vertical output applications. 特点:宽阔的安全工作区,于 2SA940A(3CA940A)互补。 Features: Wide Safe Operating Area, complementary to 2SA940A(3CA940A). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值

1.2. bsy34_sc116_sc117_sc118_sc119_sc206_sc207_sc236_sc237_sc238_sc239_sc307_sc308_sc309.pdf Size:123K _update

SC207
SC207



1.3. 2sc2073_3da2073.pdf Size:215K _update

SC207
SC207

2SC2073(3DA2073) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于功率放大和帧频输出。 Purpose: Power amplifier applications, vertical output applications. 特点:宽阔的安全工作区,于 2SA940(3CA940)互补。 Features: Wide Safe Operating Area, complementary to 2SA940(3CA940). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位

1.4. 2sc2073a.pdf Size:154K _toshiba

SC207
SC207

1.5. 2sc2075.pdf Size:152K _toshiba

SC207
SC207

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

1.6. 2sc2078.pdf Size:111K _sanyo

SC207
SC207

Ordering number:EN462E NPN Epitaxial Planar Silicon Transistor 2SC2078 27MHz RF Power Amplifier Applications Package Dimensions unit:mm 2010C [2SC2078] 1 : Base JEDEC : TO-220AB 2 : Collector EIAJ : SC-46 3 : Emitter Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 80 V Collector-to-Emitter Voltage VCER RB

1.7. ksc2073.pdf Size:56K _fairchild_semi

SC207
SC207

KSC2073 TV Vertical Deflection Output Complement to KSA940 Collector-Base Voltage : VCBO = 150V TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1.5 A

1.8. ksc2073.pdf Size:52K _samsung

SC207
SC207

KSC2073 NPN EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT TO-220 Complement to KSA940 Collector-Base Voltage VCBO = 150V ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 5 V Collector Current IC 1.5 A Collector Dissipation ( TC=25 ) PC 25 W Junction Temperat

1.9. 2sc2076.pdf Size:57K _no

SC207

1.10. csa940_csc2073.pdf Size:204K _cdil

SC207
SC207

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSA940, CSC2073 CSA940 PNP PLASTIC POWER TRANSISTOR CSC2073 NPN PLASTIC POWER TRANSISTOR Power Amplifier Applications and Vertical Output Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. B E F A 14.42 16.51 B 9.63 1

1.11. 2sc2078.pdf Size:239K _inchange_semiconductor

SC207
SC207

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2078 DESCRIPTION ·Collector-Emitter Voltage- :VCER= 75V(Min) ;RBE=150? ·Collector Current- :IC=3A APPLICATIONS ·27MHz RF Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCER Collector-Emitter Voltage RBE=150? 75

1.12. 2sc2075.pdf Size:56K _inchange_semiconductor

SC207
SC207

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2075 DESCRIPTION ·With TO-220 package ·High transition frequency ·Wide area of safe operation APPLICATIONS ·27MHz power amplifier applications ·Recommended for output stage application of AM 4W transmitter PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 sim

1.13. 2sc2073.pdf Size:228K _inchange_semiconductor

SC207
SC207

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2073 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SA940 APPLICATIONS ·Power amplifier applications. ·Vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Bas

1.14. 2sc2073.pdf Size:218K _lge

SC207
SC207

2SC2073(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Wide safe Operating Area. Complementary to 2SA940 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Paramenter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collec

1.15. st2sc2073u.pdf Size:632K _semtech

SC207
SC207

ST 2SC2073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 7 V Collector Current IC 1 A Peak Collector Current (Single pulse, tp = 300 μs) ICP 2 A 0.5 Ptot W To

Datasheet: S9018W , SS8550B , STD123S , SC116 , SC117 , SC118 , SC119 , SC206 , BC558 , SC236 , SC237 , SC238 , SC239 , SC307 , SC308 , SC309 , SCE237 .

 


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