SD408 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SD408
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 90 W
Tensión colector-emisor (Vce): 100 V
Corriente del colector DC máxima (Ic): 10 A
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar SD408
SD408 Datasheet (PDF)
ssd408.pdf
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SSD40818A, 30V,RDS(ON)18m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionTO-252The SSD408 uses advanced trench technology to provide excellent on-resistance and low gate charge.The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a load switch or in
wsd4080dn56.pdf
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WSD4080DN56N-Channel MOSFETGeneral Description Product SummeryThe WSD4080DN56 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 85A40V 4.5mcharge for most of the synchronous buck converter applications . The WSD4080DN56 meet the RoHS and Green Applications Product requirement 100% E
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