SD408 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SD408

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 90 W

Tensión colector-emisor (Vce): 100 V

Corriente del colector DC máxima (Ic): 10 A

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 25

Encapsulados: TO220

 Búsqueda de reemplazo de SD408

- Selecciónⓘ de transistores por parámetros

 

SD408 datasheet

 0.1. Size:429K  secos
ssd408.pdf pdf_icon

SD408

SSD408 18A, 30V,RDS(ON)18m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description TO-252 The SSD408 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a load switch or in

 0.2. Size:1971K  winsok
wsd4080dn56.pdf pdf_icon

SD408

WSD4080DN56 N-Channel MOSFET General Description Product Summery The WSD4080DN56 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 85A 40V 4.5m charge for most of the synchronous buck converter applications . The WSD4080DN56 meet the RoHS and Green Applications Product requirement 100% E

Otros transistores... SD350, SD401, SD402, SD403, SD404, SD405, SD406, SD407, NJW0281G, SD409, SD410, SD451, SD452, SD453, SD454, SD455, SD456