SD408 Datasheet, Equivalent, Cross Reference Search
Type Designator: SD408
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 10 A
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO220
SD408 Transistor Equivalent Substitute - Cross-Reference Search
SD408 Datasheet (PDF)
ssd408.pdf
SSD40818A, 30V,RDS(ON)18m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionTO-252The SSD408 uses advanced trench technology to provide excellent on-resistance and low gate charge.The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a load switch or in
wsd4080dn56.pdf
WSD4080DN56N-Channel MOSFETGeneral Description Product SummeryThe WSD4080DN56 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 85A40V 4.5mcharge for most of the synchronous buck converter applications . The WSD4080DN56 meet the RoHS and Green Applications Product requirement 100% E
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SC945 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
