SD408 Datasheet, Equivalent, Cross Reference Search
Type Designator: SD408
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 10 A
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO220
SD408 Transistor Equivalent Substitute - Cross-Reference Search
SD408 Datasheet (PDF)
ssd408.pdf
SSD40818A, 30V,RDS(ON)18m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionTO-252The SSD408 uses advanced trench technology to provide excellent on-resistance and low gate charge.The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a load switch or in
wsd4080dn56.pdf
WSD4080DN56N-Channel MOSFETGeneral Description Product SummeryThe WSD4080DN56 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 85A40V 4.5mcharge for most of the synchronous buck converter applications . The WSD4080DN56 meet the RoHS and Green Applications Product requirement 100% E
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
