SS201 Todos los transistores

 ..1. Size:262K  gdr
 ss200 ss201 ss202.pdf

 ..2. Size:123K  gdr
 ss106 ss108 ss109 ss120 ss125 ss126 ss200 ss201 ss202 ss216 ss218 ss219.pdf

 0.1. Size:107K  sanyo
 fss201.pdf

Ordering number ENN5999A N-Channel Silicon MOSFET FSS201 DC/DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm 2.5V drive. 2116 [FSS201] 8 5 1 Source 2 Source 14 3 Source 0.2 5.0 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain 0.595 1.27 0.43 Specifications SANYO SOP8 Absolute Maximum Ratings at Ta = 25 C Parameter Symbol

 0.2. Size:105K  onsemi
 nss20101j nsv20101j.pdf

NSS20101J, NSV20101J 20 V, 1.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is

 0.3. Size:109K  onsemi
 nss20101j.pdf

NSS20101J, NSV20101J 20 V, 1.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is

 0.4. Size:497K  huashuo
 hss2012.pdf

HSS2012 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS2012 is the high cell density trenched N- VDS 20 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 10 m and efficiency for most of the small power switching and load switch applications. ID 6.8 A The HSS2012 meet the RoHS and Green Product requirement with full function reliability approve