All Transistors. SS201 Datasheet

 

SS201 Datasheet, Equivalent, Cross Reference Search


   Type Designator: SS201
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.03 A
   Forward Current Transfer Ratio (hFE), MIN: 32
   Noise Figure, dB: -
   Package: SOT23

 SS201 Transistor Equivalent Substitute - Cross-Reference Search

   

SS201 Datasheet (PDF)

 ..1. Size:262K  gdr
ss200 ss201 ss202.pdf

SS201

 0.1. Size:107K  sanyo
fss201.pdf

SS201
SS201

Ordering number:ENN5999AN-Channel Silicon MOSFETFSS201DC/DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm 2.5V drive.2116[FSS201]8 51 : Source2 : Source14 3 : Source0.25.04 : Gate5 : Drain6 : Drain7 : Drain8 : Drain0.595 1.270.43SpecificationsSANYO : SOP8Absolute Maximum Ratings at Ta = 25CParameter Symbol

 0.2. Size:105K  onsemi
nss20101j nsv20101j.pdf

SS201
SS201

NSS20101J, NSV20101J20 V, 1.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is

 0.3. Size:109K  onsemi
nss20101j.pdf

SS201
SS201

NSS20101J, NSV20101J20 V, 1.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is

 0.4. Size:497K  huashuo
hss2012.pdf

SS201
SS201

HSS2012 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS2012 is the high cell density trenched N-VDS 20 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 10 m and efficiency for most of the small power switching and load switch applications. ID 6.8 A The HSS2012 meet the RoHS and Green Product requirement with full function reliability approve

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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