SS202 Todos los transistores

 ..1. Size:262K  gdr
 ss200 ss201 ss202.pdf

 ..2. Size:123K  gdr
 ss106 ss108 ss109 ss120 ss125 ss126 ss200 ss201 ss202 ss216 ss218 ss219.pdf

 0.1. Size:112K  sanyo
 fss202.pdf

Ordering number EN5885A N-Channel Silicon MOSFET FSS202 DC-DC Converter Applications Features Package Dimensions Low ON resistance. unit mm 4V drive. 2116 [FSS202] 8 5 1 Source 2 Source 14 3 Source 0.2 5.0 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain 0.595 1.27 0.43 Specifications SANYO SOP8 Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings U

 0.2. Size:121K  fairchild semi
 fdd6682 dss20201l.pdf

June 2004 FDD6682/FDU6682 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 75 A, 30 V RDS(ON) = 6.2 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 8.0 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charg

 0.3. Size:121K  diodes
 dss20201l.pdf

DSS20201L LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Ideal for Medium Power Amplification and Switching Case SOT-23 Complementary PNP Type Available (DSS20200L) Case Material Molded Plastic, "Green Molding Compound. UL Flammability Classification Rating 94V-0 Ultra Low Collec

 0.4. Size:216K  diodes
 dss20200l.pdf

DSS20200L 20V PNP LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -20V Case SOT23 IC = -2A Continuous Collector Current Case Material molded plastic, Green molding compound ICM = -4A Peak Pulse Current UL Flammability Classification Rating 94V-0 Low Saturation Voltage VCE(sat)

 0.5. Size:202K  onsemi
 nss20200dmt.pdf

DATA SHEET www.onsemi.com Low VCE(sat) PNP Transistors 20 Volt, 2 Amp PNP Low VCE(sat) Transistors 20 V, 2 A NSS20200DMT MARKING DIAGRAM onsemi s e2PowerEdge family of low VCE(sat) transistors are 1 6 miniature surface mount devices featuring ultra low saturation voltage WDFN6 AT MG 2 5 (VCE(sat)) and high current gain capability. These are designed for use CASE 506AN G 3 4 1

 0.6. Size:47K  onsemi
 nss20201mr6.pdf

NSS20201MR6T1G 20 V, 3 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa

 0.7. Size:118K  onsemi
 nss20201mr6t1g.pdf

NSS20201MR6T1G 20 V, 3 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa

 0.8. Size:119K  onsemi
 nss20201lt1g.pdf

NSS20201LT1G, NSV20201LT1G 20 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These 20 VOLTS 4.0 AMPS are designed for use in low voltage, high speed switching applications NPN LOW VCE(sat) T

 0.9. Size:125K  onsemi
 nss20201l-d.pdf

NSS20201LT1G 20 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa

 0.10. Size:189K  onsemi
 nss20201lt1g nsv20201lt1g.pdf

NSS20201LT1G, NSV20201LT1G 20 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) www.onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These 20 VOLTS 4.0 AMPS are designed for use in low voltage, high speed switching applications NPN LOW VCE(sat) TRAN

 0.11. Size:126K  onsemi
 nss20200l-d.pdf

NSS20200LT1G 20 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa

 0.12. Size:126K  onsemi
 nss20200lt1g.pdf

NSS20200LT1G, NSV20200LT1G 20 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These -20 VOLTS are designed for use in low voltage, high speed switching applications 4.0 AMPS where affordable

 0.13. Size:190K  onsemi
 nss20200lt1g nsv20200lt1g.pdf

NSS20200LT1G, NSV20200LT1G 20 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) www.onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These -20 VOLTS are designed for use in low voltage, high speed switching applications 4.0 AMPS where affordable ef

 0.14. Size:101K  onsemi
 nss20200w6.pdf

NSS20200W6 20 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is important