SS202 Datasheet, Equivalent, Cross Reference Search
Type Designator: SS202
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Forward Current Transfer Ratio (hFE), MIN: 32
Noise Figure, dB: -
Package: SOT23
SS202 Transistor Equivalent Substitute - Cross-Reference Search
SS202 Datasheet (PDF)
fss202.pdf
Ordering number:EN5885AN-Channel Silicon MOSFETFSS202DC-DC Converter ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2116[FSS202]8 51:Source2:Source14 3:Source0.25.04:Gate5:Drain6:Drain7:Drain8:Drain0.595 1.270.43SpecificationsSANYO:SOP8Absolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings U
fdd6682 dss20201l.pdf
June 2004FDD6682/FDU668230V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 75 A, 30 V RDS(ON) = 6.2 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 8.0 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate charg
dss20201l.pdf
DSS20201LLOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Ideal for Medium Power Amplification and Switching Case: SOT-23 Complementary PNP Type Available (DSS20200L) Case Material: Molded Plastic, "Green Molding Compound. UL Flammability Classification Rating 94V-0 Ultra Low Collec
dss20200l.pdf
DSS20200L20V PNP LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -20V Case: SOT23 IC = -2A Continuous Collector Current Case Material: molded plastic, Green molding compound ICM = -4A Peak Pulse Current UL Flammability Classification Rating 94V-0 Low Saturation Voltage VCE(sat)
nss20200dmt.pdf
DATA SHEETwww.onsemi.comLow VCE(sat) PNP Transistors 20 Volt, 2 AmpPNP Low VCE(sat) Transistors20 V, 2 ANSS20200DMT MARKINGDIAGRAMonsemis e2PowerEdge family of low VCE(sat) transistors are1 6miniature surface mount devices featuring ultra low saturation voltageWDFN6AT MG2 5(VCE(sat)) and high current gain capability. These are designed for useCASE 506ANG3 41
nss20201mr6.pdf
NSS20201MR6T1G20 V, 3 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa
nss20201mr6t1g.pdf
NSS20201MR6T1G20 V, 3 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa
nss20201lt1g.pdf
NSS20201LT1G,NSV20201LT1G20 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These20 VOLTS 4.0 AMPSare designed for use in low voltage, high speed switching applicationsNPN LOW VCE(sat) T
nss20201l-d.pdf
NSS20201LT1G20 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa
nss20201lt1g nsv20201lt1g.pdf
NSS20201LT1G,NSV20201LT1G20 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)www.onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These20 VOLTS 4.0 AMPSare designed for use in low voltage, high speed switching applicationsNPN LOW VCE(sat) TRAN
nss20200l-d.pdf
NSS20200LT1G20 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa
nss20200lt1g.pdf
NSS20200LT1G,NSV20200LT1G20 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These-20 VOLTSare designed for use in low voltage, high speed switching applications4.0 AMPSwhere affordable
nss20200lt1g nsv20200lt1g.pdf
NSS20200LT1G,NSV20200LT1G20 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)www.onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These-20 VOLTSare designed for use in low voltage, high speed switching applications4.0 AMPSwhere affordable ef
nss20200w6.pdf
NSS20200W620 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is important
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .