2SA2018F
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA2018F
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-base (Vcb): 15
V
Tensión colector-emisor (Vce): 12
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 260
MHz
Capacitancia de salida (Cc): 6.5
pF
Ganancia de corriente contínua (hfe): 270
Paquete / Cubierta:
SOT-523
Búsqueda de reemplazo de transistor bipolar 2SA2018F
2SA2018F
Datasheet (PDF)
..1. Size:142K secos
2sa2018f.pdf 
2SA2018FPNP SiliconElektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductFEATURESSOT-523High Collector CurrentDim Min MaxLow VCE(sat) - VCE(sat) -250mV at IC = -200mA/IB=-10mAA 1.50 1.70B 0.78A 0.82C 0.80 0.82LMARKING CODED 0.28 0.32BW3G 0.90 1.10SBTop View2 1H 0.00 0.10J 0.10 0.20DK 0.35 0.41G3. Collector L 0.49 0
7.1. Size:1677K rohm
2sa2030 2sa2018 2sa2119k.pdf
2SA2030 / 2SA2018 / 2SA2119KDatasheetLow frequency transistor(-12V, -500mA)lOutlinelParameter Value SOT-723 SOT-416VCEO-12VIC-500mA 2SA2030 2SA2018(VMT3) (EMT3)lFeatures l SOT-346 1)High current.2)Collector-Emitter saturation voltage is low. VCE(sat)250mA at IC=-200mA/IB=-10
7.2. Size:139K rohm
2sa2018 2sa2018 2sa2030 2sa2119k.pdf
2SA2018 / 2SA2030 / 2SA2119K Transistors Low frequency transistor 2SA2018 / 2SA2030 / 2SA2119K The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Dimensions (Unit : mm) Applications For switching, for muting. 2SA2018 Features 1) A collector current is large. 2) Collector saturation voltage is low. Each
7.3. Size:208K lge
2sa2018.pdf
2SA2018SOT-523 Transistor(PNP)1. BASE SOT-5232. EMITTER 3. COLLECTOR Features A collector current is large. Low VCE(sat). VCE(sat)-250mV at IC = -200mA / IB = -10mA MARKING: BW MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector- Base Voltage -15 V VCEO Collector-Emitter Voltage -12
7.4. Size:151K wietron
2sa2018.pdf
2SA2018PNP Genera Purpose Transistors3P b Lead(Pb)-Free12 FEATURES:SOT-523(SC-75)* A collector current is large. * Low VCE(sat). VCE(sat)-250mV @ IC = -200mA / IB = -10mA MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol ValueUnitsCollector- Base Voltage VCBO -15 V-12 VCollector-Emitter Voltage VCEOEmitter-Base Voltage VEBO -6 VCollector Cur
7.5. Size:907K kexin
2sa2018.pdf
SMD Type TransistorsPNP Transistors2SA2018SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 A collector current is large. Low VCE(sat). VCE(sat)-250mV at IC = -200mA / IB = -10mA30.30.05+0.10.5 -0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Coll
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