3DD13001 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 3DD13001
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.75 W
   Tensión colector-base (Vcb): 600 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 8 MHz
   Ganancia de corriente contínua (hfe): 17
   Paquete / Cubierta: TO92

Búsqueda de reemplazo de transistor bipolar 3DD13001

3DD13001 Datasheet (PDF)

..1. Size:529K secos
3dd13001.pdf

3DD13001 0.2A , 600V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Power switching applications ADBCLASSIFICATION OF hFE(1) Product-Rank 3DD13001-A 3DD13001-B E CFRange 17~23 20~26 G H1Base 1113 2Collector 222Emitter 3Emitter 333

..2. Size:2110K jiangsu
3dd13001.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13001 TRANSISTOR (NPN) 1. BASE 2. COLLECTOR FEATURES Power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Volta

..3. Size:222K lge
3dd13001.pdf

3DD13001(NPN)TO-92 Bipolar TransistorsTO-92 1. BASE 4.455.21 2. COLLECTOR 3. EMITTER 4.322.92 5.33MINFeatures power switching applications 3.43MIN2.412.67MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.182.034.19Symbol Parameter Value Units2.671.14VCBO Collector -Base Voltage 600 V 1.402.03VCEO Collector-Emitter Voltage 400 V 2.67VEB

..4. Size:182K crhj
3dd13001 a1.pdf

NPN R 3DD13001 A1 3DD13001 A1 NPN VCEO 400 V IC 0.25 A Ptot Ta=25 0.8 W

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3dd13001.pdf

SMD Type TransistorsNPN Transistors3DD13001 Features1.70 0.1 Collector-emitter Voltage: V(BR)CEO=400V Collector Current: IC=0.2A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 600 VCollector-Emitter Voltage VCEO 400 VEmitter-Base Voltage VEBO 7 VCollector Current -

0.1. Size:632K jiangsu
3dd13001b.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN)FEATURE power switching applications TO-92 1. BASE 2. COLLECTOR 3. EMITTER Equivalent Circuit 1300113001=Device code S 6B S 6B=Code 1ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 3DD13001B TO-92 Bulk 1000pcs/BagB-TA

0.2. Size:182K crhj
3dd13001a1.pdf