3DD13001 Datasheet and Replacement
Type Designator: 3DD13001
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 17
Noise Figure, dB: -
Package: TO92
3DD13001 Substitution
3DD13001 Datasheet (PDF)
3dd13001.pdf

3DD13001 0.2A , 600V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Power switching applications ADBCLASSIFICATION OF hFE(1) Product-Rank 3DD13001-A 3DD13001-B E CFRange 17~23 20~26 G H1Base 1113 2Collector 222Emitter 3Emitter 333
3dd13001.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13001 TRANSISTOR (NPN) 1. BASE 2. COLLECTOR FEATURES Power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Volta
3dd13001.pdf

3DD13001(NPN)TO-92 Bipolar TransistorsTO-92 1. BASE 4.455.21 2. COLLECTOR 3. EMITTER 4.322.92 5.33MINFeatures power switching applications 3.43MIN2.412.67MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.182.034.19Symbol Parameter Value Units2.671.14VCBO Collector -Base Voltage 600 V 1.402.03VCEO Collector-Emitter Voltage 400 V 2.67VEB
3dd13001 a1.pdf

NPN R 3DD13001 A1 3DD13001 A1 NPN VCEO 400 V IC 0.25 A Ptot Ta=25 0.8 W
Datasheet: 2SC1623K , 2SC1740S , 2SC2235TM , 2SC4081F , 2SC4226 , 2SC5343T , 2SC5345T , 2SD1468S , C945 , 3DD13003B , 8050SST , 8550SST , B772S , C1815T , C945T , D882S , D965 .
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