All Transistors. 3DD13001 Datasheet

 

3DD13001 Datasheet and Replacement


   Type Designator: 3DD13001
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 17
   Noise Figure, dB: -
   Package: TO92
 

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3DD13001 Datasheet (PDF)

 ..1. Size:529K  secos
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3DD13001

3DD13001 0.2A , 600V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Power switching applications ADBCLASSIFICATION OF hFE(1) Product-Rank 3DD13001-A 3DD13001-B E CFRange 17~23 20~26 G H1Base 1113 2Collector 222Emitter 3Emitter 333

 ..2. Size:2110K  jiangsu
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3DD13001

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13001 TRANSISTOR (NPN) 1. BASE 2. COLLECTOR FEATURES Power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Volta

 ..3. Size:222K  lge
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3DD13001

3DD13001(NPN)TO-92 Bipolar TransistorsTO-92 1. BASE 4.455.21 2. COLLECTOR 3. EMITTER 4.322.92 5.33MINFeatures power switching applications 3.43MIN2.412.67MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.182.034.19Symbol Parameter Value Units2.671.14VCBO Collector -Base Voltage 600 V 1.402.03VCEO Collector-Emitter Voltage 400 V 2.67VEB

 ..4. Size:182K  crhj
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3DD13001

NPN R 3DD13001 A1 3DD13001 A1 NPN VCEO 400 V IC 0.25 A Ptot Ta=25 0.8 W

Datasheet: 2SC1623K , 2SC1740S , 2SC2235TM , 2SC4081F , 2SC4226 , 2SC5343T , 2SC5345T , 2SD1468S , C945 , 3DD13003B , 8050SST , 8550SST , B772S , C1815T , C945T , D882S , D965 .

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