B772S
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: B772S
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 30
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50
MHz
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar B772S
B772S
Datasheet (PDF)
..1. Size:346K secos
b772s.pdf
B772S -3A , -40V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low speed switching. G H1Emitter 1112Collector 222J3Base 333CLASSIFICATION OF hFE A DMillimeter Product-Rank B772S-R B772S-O B772S-Y B772S-GR REF. BMin. Max. A 4.40 4.7
..2. Size:966K jiangsu
b772s.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors B772S TRANSISTOR (PNP) TO-92FEATURES Low speed switching 1. EMITTER 2. COLLECTOR 3 BASE Equivalent Circuit B772 B772 Z Z=Rank of hFE 1ORDERING INFORMATION Part Numb
..3. Size:195K lge
b772s.pdf
B772S Transistor(PNP)TO-921. EMITTER 2. COLLECTOR 3 BASE Features Low speed switching MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V Dimensions in inches and (millimeters)IC Collector Current -Continuous -3 A PC Collector Power Dis
0.1. Size:257K utc
2sb772s.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB772S PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 1 DESCRIPTION SOT-223 SOT-89The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A 1* Low saturation voltage * Complement to 2SD882S TO-92
0.2. Size:233K utc
b772ss.pdf
UNISONIC TECHNOLOGIES CO., LTD B772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to D882SS ORDERING INFORMATION Order Number Pi
0.3. Size:78K taiwansemi
tsb772sct.pdf
TSB772S Low Vcesat PNP Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter BVCBO -50V 2. Collector 3. Base BVCEO -30V IC -3A VCE(SAT) -0.5V @ IC / IB = -2A / -200mA Features Ordering Information Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.) Part No. Package Packing Complementary part with TSD882S TSB772SCT B0 TO-92 1Kpcs / Bulk Structure T
0.4. Size:59K hsmc
hsb772s.pdf
Spec. No. : HE6549HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2004.08.13MICROELECTRONICS CORP.Page No. : 1/5HSB772SPNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HSB772S is designed for using in output stage of 0.75W amplifier, voltageregulator, DC-DC converter and driver.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature..................
0.5. Size:352K cystek
btb772sa3.pdf
Spec. No. : C817A3-H Issued Date : 2003.05.31 CYStech Electronics Corp. Revised Date:2013.03.21 Page:1/6 Low Vcesat PNP Epitaxial Planar Transistor BTB772SA3 Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882SA3 Pb-free lead plating and halogen-free package Symbol Outline BTB77
0.6. Size:221K cystek
btb772st3.pdf
Spec. No. : C809T3 Issued Date : 2008.08.01 CYStech Electronics Corp. Revised Date: Page:1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772ST3 Features Low VCE(sat), typically -0.45 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Pb-free package Symbol Outline BTB772ST3 TO-126 BBase CCollector EEmitter E C B Absolute
0.7. Size:979K blue-rocket-elect
2sb772s.pdf
2SB772S Rev.A May.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features VCE(sat),,h FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,
0.8. Size:27K shantou-huashan
hb772s.pdf
PN P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. P HB772S AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO-92 ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector Dissipation
0.9. Size:256K lzg
2sb772s 3ca772s.pdf
2SB772S(3CA772S) PNP /SILICON PNP TRANSISTOR : 3 ,,/Purpose: Output stage of 3 watts audio amplifier, regulator, DC-DC converter and relay driver. : V ,,h /Features: Low saturation voltage, excellent h FECE(sat) FElinearity and high h . FE
0.10. Size:242K pjsemi
2sb772sq-r 2sb772sq-q 2sb772sq-p 2sb772sq-e.pdf
2SB772SQSilicon PNP Power TransistorFeatures High current output up to 3A Low saturation voltage Complement to 2SD882SQSOT-89PIN1Base PIN 2Collector PIN 3EmitterApplicationsThese devices are intended for use in audio frequency power amplifier and low speed switching applicationsAbsolute Maximum Ratings (Ta=25unless otherwise specified)Parameter Symbo
0.11. Size:801K cn juxing
2sb772sq.pdf
2SB772SQSilicon PNP Power TransistorFeatures High current output up to 3A Low saturation voltage Complement to 2SD882SQSOT-89PIN1Base PIN 2Collector PIN 3EmitterApplicationsThese devices are intended for use in audio frequencypower amplifier and low speed switching applicationsAbsolute Maximum Ratings (Ta=25unless otherwise specified)Parameter Symbol
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