B772S datasheet, аналоги, основные параметры
Наименование производителя: B772S 📄📄
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.625 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 50 MHz
Статический коэффициент передачи тока (hFE): 60
Корпус транзистора: TO92
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Аналоги (замена) для B772S
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B772S даташит
..1. Size:346K secos
b772s.pdf 
B772S -3A , -40V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low speed switching. G H 1Emitter 1 1 1 2Collector 2 2 2 J 3Base 3 3 3 CLASSIFICATION OF hFE A D Millimeter Product-Rank B772S-R B772S-O B772S-Y B772S-GR REF. B Min. Max. A 4.40 4.7
..2. Size:966K jiangsu
b772s.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors B772S TRANSISTOR (PNP) TO-92 FEATURES Low speed switching 1. EMITTER 2. COLLECTOR 3 BASE Equivalent Circuit B772 B772 Z Z=Rank of hFE 1 ORDERING INFORMATION Part Numb
..3. Size:195K lge
b772s.pdf 
B772S Transistor(PNP) TO-92 1. EMITTER 2. COLLECTOR 3 BASE Features Low speed switching MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V Dimensions in inches and (millimeters) IC Collector Current -Continuous -3 A PC Collector Power Dis
0.2. Size:233K utc
b772ss.pdf 
UNISONIC TECHNOLOGIES CO., LTD B772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to D882SS ORDERING INFORMATION Order Number Pi
0.3. Size:78K taiwansemi
tsb772sct.pdf 
TSB772S Low Vcesat PNP Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter BVCBO -50V 2. Collector 3. Base BVCEO -30V IC -3A VCE(SAT) -0.5V @ IC / IB = -2A / -200mA Features Ordering Information Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.) Part No. Package Packing Complementary part with TSD882S TSB772SCT B0 TO-92 1Kpcs / Bulk Structure T
0.4. Size:59K hsmc
hsb772s.pdf 
Spec. No. HE6549 HI-SINCERITY Issued Date 1992.11.25 Revised Date 2004.08.13 MICROELECTRONICS CORP. Page No. 1/5 HSB772S PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB772S is designed for using in output stage of 0.75W amplifier, voltage regulator, DC-DC converter and driver. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature..................
0.5. Size:352K cystek
btb772sa3.pdf 
Spec. No. C817A3-H Issued Date 2003.05.31 CYStech Electronics Corp. Revised Date 2013.03.21 Page 1/6 Low Vcesat PNP Epitaxial Planar Transistor BTB772SA3 Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882SA3 Pb-free lead plating and halogen-free package Symbol Outline BTB77
0.6. Size:221K cystek
btb772st3.pdf 
Spec. No. C809T3 Issued Date 2008.08.01 CYStech Electronics Corp. Revised Date Page 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772ST3 Features Low VCE(sat), typically -0.45 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Pb-free package Symbol Outline BTB772ST3 TO-126 B Base C Collector E Emitter E C B Absolute
0.8. Size:27K shantou-huashan
hb772s.pdf 
PN P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. P HB772S AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO-92 ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation
0.9. Size:256K lzg
2sb772s 3ca772s.pdf 
2SB772S(3CA772S) PNP /SILICON PNP TRANSISTOR 3 , , /Purpose Output stage of 3 watts audio amplifier, regulator, DC-DC converter and relay driver. V , ,h /Features Low saturation voltage, excellent h FE CE(sat) FE linearity and high h . FE
0.10. Size:242K pjsemi
2sb772sq-r 2sb772sq-q 2sb772sq-p 2sb772sq-e.pdf 
2SB772SQ Silicon PNP Power Transistor Features High current output up to 3A Low saturation voltage Complement to 2SD882SQ SOT-89 PIN1 Base PIN 2 Collector PIN 3 Emitter Applications These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta=25 unless otherwise specified) Parameter Symbo
0.11. Size:801K cn juxing
2sb772sq.pdf 
2SB772SQ Silicon PNP Power Transistor Features High current output up to 3A Low saturation voltage Complement to 2SD882SQ SOT-89 PIN1 Base PIN 2 Collector PIN 3 Emitter Applications These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta=25 unless otherwise specified) Parameter Symbol
Другие транзисторы: 2SC4226, 2SC5343T, 2SC5345T, 2SD1468S, 3DD13001, 3DD13003B, 8050SST, 8550SST, 2N5551, C1815T, C945T, D882S, D965, EMT1, M28ST, M8050T, M8550T
