MMDT4944 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MMDT4944 NPN+NPN Dual-Chip Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-353 FEATURES A Small package (dual type) E1L High voltage and high current High hFE, Excellent hFE linearity BF H C KPACKAGING INFORMATION Weight: 0.0081g (approximate) D G JMillimeter Milli

MMDT4413COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Die Construction Case: SOT363 Two Internally Isolated NPN/PNP Transistors in One Package Case Material: Molded Plastic, Green Molding Compound. NPN = 4401 UL Flammability Classification Rating 94V-0 PNP = 4403 Moisture Sensitivity: Level 1 per J-STD-020 Id

MMDT4124 25V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data BVCEO > 25V Case: SOT363 IC = 200mA Case Material: Molded Plastic, Green Molding Compound; UL Complementary PNP Type Available (MMDT4126) Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity: Level 1 per J-STD-

MMDT4126 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-363 Complementary NPN Type Available (MMDT4124) C2 B1 E1Dim Min Max Ideal for Medium Power Amplification and Switching A 0.10 0.30 Ultra-Small Surface Mount Package B CB 1.15 1.35 Lead Free/RoHS Compliant (Note 3) C 2.00 2.20 "Green" Devic

MMDT4403 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-363 C2 B1 E1 Ideal for Low Power Amplification and Switching Dim Min Max Ultra-Small Surface Mount Package A 0.10 0.30 B C Lead Free/RoHS Compliant (Note 3) B 1.15 1.35 "Green" Device (Note 4 and 5) E2 B2 C1C 2.00 2.20 Mechanical Data D 0.

MMDT4146COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Complementary Pair One 4124-Type NPN Case: SOT-363One 4126-Type PNP Case Material: Molded Plastic, Green Molding Compound, Epitaxial Planar Die Construction Note 5. UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching

MMDT4401 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-363 Ideal for Low Power Amplification and Switching C2 B1 E1Dim Min Max Ultra-Small Surface Mount Package A 0.10 0.30 Qualified to AEC-Q101 Standards for High Reliability CBB 1.15 1.35 Lead Free/RoHS Compliant (Note 3) E2 B2 C1 C 2.00 2.20

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMDT4401Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Ultra-Small Surface Mount Package Epitaxial Planar Die Construction Transistors

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMMDT4403Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNPRoHS Compliant. See ordering information) Epitaxial Planar Die ConstructionPlastic-Encapsulate Ideal for Low Power Amplification and Switching

MMDT4401Features Epitaxial Planar Die Construction Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Dual NPN Epoxy Meets UL 94 V-0 Flammability RatingPlastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)TransistorsMaximum Ratings @ 25C Unless Otherwise Spec

MMDT4413 NPN - PNP Plastic-Encapsulated Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-363 Complementary Pair o.055(1.40)8.047(1.20) .026TYP 0o Epitaxial Planar Die Construction (0.65TYP) Ideal for Low Power Amplification and Switching .021REF(0.525)REFMARKING .053(1.35).096(2.

MMDT4403PNP Silicon Elektronische BauelementeMulti-Chip TransistorRoHS Compliant ProductSOT-363* Featureso.055(1.40)8.047(1.20)0o .026TYP(0.65TYP) .021REF(0.525)REFPower dissipation.O PCM : 0.2 W (Temp.=25 C) .053(1.35).096(2.45).045(1.15).085(2.15)Collector current.018(0.46).010(0.26)ICM : - 0.6 A.014(0.35).006(0.15)C B E.006(0.15)2 1

MMDT4401NPN Plastic-EncapsulateElektronische BauelementeMulti-Chip TransistorRoHS Compliant ProductSOT-363* Featureso.055(1.40)8.047(1.20)0o .026TYP(0.65TYP) .021REFPower Dissipation. (0.525)REFO PCM : 0.2 W (Temp.=25 C) .053(1.35).096(2.45).045(1.15).085(2.15)Collector Current.018(0.46).010(0.26)ICM : 0.6 A.014(0.35).006(0.15)C B E.006(0.

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate TransistorsDUAL TRANSISTOR (NPN+PNP) MMDT4413SOT-363 FEATURES Complementary Pair One 4401-Type NPNOne 4403-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and SwitchingMAKING: K13 Maximum Ratings, NPN 4401 Section (Ta = 25 unless otherwise specified)Symbol Pa

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors J C T DUAL TRANSISTOR (PNP+PNP) MMDT4403SOT-363 FEATURES Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING:K2T Maximum Ratings (Ta=25 unless otherwise specified) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors J C T MMDT4401 DUAL TRANSISTOR (NPN+NPN) DUAL TRANSISTOR (NPN) SOT-363 FEATURES Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING:K2X Maximum Ratings (Ta = 25 unless otherwise specified) Symbol Parameter Value Units VCBO Collector-B

MMDT4413 Complementary NPN/PNP TransistorSOT-363Features Complementary Pair One 4401-Type NPN, One 4403-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MAKING: K13 Dimensions in inches and (millimeters)Maximum Ratings, NPN 4401 Section (TA = 25 unless otherwise specified) Symbol Parameter Value UnitsVCBO Collector-B

MMDT4403 SOT-363 Dual Transistor (PNP)SOT-363Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING:K2T Maximum Ratings (TA = 25 unless otherwise specified) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5

MMDT4401 SOT-363 Dual Transistor (NPN)SOT-363Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING:K2X Maximum Ratings (TA = 25 unless otherwise specified) Symbol Parameter Value Units Dimensions in inches and (millimeters)VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V

MMDT4401DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTORPOWER 225 mWattVOLTAGE 40 VoltFEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE =40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)MECHANICAL DATA Case: SOT-363, Plastic Te

MMDT4401SOT-363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+NPN) DUAL TRANSISTOR (NPN) SOT-363 FEATURES Epitaxial Planar Die Construction Ideal for Low Power Amplification and SwitchingMRKING:K2X Maximum Ratings (Ta = 25 unless otherwise specified) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitt

RoHS COMPLIANT MMDT4403Dual PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:K2T Equivalent circuit 1 / 5 S-S3079 Yangzhou

RoHS COMPLIANT MMDT4401Dual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:K2X Equivalent circuit 1 / 5 S-S3078 Yangzhou

Plastic-Encapsulate Transistors DUAL TRANSISTOR (PNP+PNP)FEATURESSOT-363 Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING:K2T Maximum Ratings (Ta=25 unless otherwise specified) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current