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UMH15N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UMH15N
   Código: H15
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 47 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT-363
 
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UMH15N Datasheet (PDF)

 ..1. Size:300K  secos
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UMH15N

UMH15N NPN Multi-ChipElektronische BauelementeBuilt-in Resistors TransistorRoHS Compliant ProductSOT-363o.055(1.40)8Features.047(1.20)0o .026TYP(0.65TYP)Two DTC144T chips in a package* .021REF(0.525)REF* Transistor elements are independent, eliminating interference. .053(1.35).096(2.45).045(1.15).085(2.15)* Mounting cost and area can be cut in ha

 ..2. Size:854K  htsemi
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UMH15N

UMH15N DIGITAL TRANSISTOR (NPN+ NPN) SOT-363 FEATURES z Two DTC144T chips in a package z Transistor elements are independent, eliminating interference 1z Mounting cost and area can be cut in half. External circuit MARKING: H15 Absolute maximum ratings(Ta=25) Parameter Symbol Limits UnitCollector-base voltage V(BR)CBO 50 VCollector-emitter voltage V(BR)CEO 50 VEmit

 9.1. Size:612K  nxp
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UMH15N

PEMH15; PUMH15NPN/NPN resistor-equipped transistors;R1 = 4.7 k, R2 = 4.7 kRev. 5 16 December 2011 Product data sheet1. Product profile1.1 General descriptionNPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package NPN/PNP PNP/PNP Package complement complement configurationNXP

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