UMH15N Datasheet and Replacement
Type Designator: UMH15N
SMD Transistor Code: H15
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-363
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UMH15N Datasheet (PDF)
umh15n.pdf

UMH15N NPN Multi-ChipElektronische BauelementeBuilt-in Resistors TransistorRoHS Compliant ProductSOT-363o.055(1.40)8Features.047(1.20)0o .026TYP(0.65TYP)Two DTC144T chips in a package* .021REF(0.525)REF* Transistor elements are independent, eliminating interference. .053(1.35).096(2.45).045(1.15).085(2.15)* Mounting cost and area can be cut in ha
umh15n.pdf

UMH15N DIGITAL TRANSISTOR (NPN+ NPN) SOT-363 FEATURES z Two DTC144T chips in a package z Transistor elements are independent, eliminating interference 1z Mounting cost and area can be cut in half. External circuit MARKING: H15 Absolute maximum ratings(Ta=25) Parameter Symbol Limits UnitCollector-base voltage V(BR)CBO 50 VCollector-emitter voltage V(BR)CEO 50 VEmit
pemh15 pumh15.pdf

PEMH15; PUMH15NPN/NPN resistor-equipped transistors;R1 = 4.7 k, R2 = 4.7 kRev. 5 16 December 2011 Product data sheet1. Product profile1.1 General descriptionNPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package NPN/PNP PNP/PNP Package complement complement configurationNXP
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 2SD1007HR | ED1602D | DRC9143X | D62T7060 | KT208I | BDY12B | SFE245
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History: 2SD1007HR | ED1602D | DRC9143X | D62T7060 | KT208I | BDY12B | SFE245



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