C945LT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

C945LT1 NPN Transistors 3 P b Lead(Pb)-Free 1 2 C945LT1=CR WEITRON http //www.weitron.com.tw C945LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain hFE - - 130 400 (IC=1 mAdc, VCE=6.0 Vdc) Collector-Emitter Saturation Voltage VCE(sat) - Vdc - 0.3 (IC=100 mAdc, IB=10mAdc)

SEMICONDUCTOR 2SC945LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package SOT-23 * Collector Current Ic= 150mA * Collector-Emitter Voltage Vce= 50V * High Total Power Dissipation Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 60 V

2SC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor 2SA733 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurations. T

MMBTSC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA733 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO

SHI KUES (945 SOT 23 F Power dissipation P 0.2 W