C945LT1 Datasheet and Replacement

C945LT1NPN Transistors3P b Lead(Pb)-Free12C945LT1=CRWEITRONhttp://www.weitron.com.twC945LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Min Typ Max UnitON CHARACTERISTICSDC Current GainhFE --130400(IC=1 mAdc, VCE=6.0 Vdc)Collector-Emitter Saturation VoltageVCE(sat) - Vdc- 0.3 (IC=100 mAdc, IB=10mAdc)

SEMICONDUCTOR 2SC945LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Collector Current: Ic= 150mA * Collector-Emitter Voltage:Vce= 50V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo 60 V

2SC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor 2SA733 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurations. T

MMBTSC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA733 is recommended. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO

SHI KUES (945 SOT23F Power dissipation P 0.2 W