MBT3906DW Todos los transistores

 ..1. Size:351K  wietron
 mbt3906dw.pdf

MBT3906DW 2 1 3 Dual General Purpose Transistor 6 5 4 PNP+PNP Silicon 1 2 3 P b Lead(Pb)-Free 4 5 6 SOT-363(SC-88) PNP+PNP Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V -40 Vdc CEO Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current-Continuous IC mAdc -200 Thermal Characteristics Characteristics Symbol Max Uni

 0.1. Size:126K  onsemi
 mbt3906dw1 smbt3906dw1.pdf

MBT3906DW1, SMBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applicat

 0.2. Size:130K  onsemi
 mbt3906dw1t2g.pdf

MBT3906DW1, SMBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applicat

 0.3. Size:130K  onsemi
 mbt3906dw1t1g smbt3906dw1t1g.pdf

MBT3906DW1T1G, SMBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount

 0.4. Size:325K  onsemi
 mbt3906dw1.pdf

MBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 www.onsemi.com six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount MARKING applications whe

 0.5. Size:178K  onsemi
 mbt3906dw1t1.pdf

MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 http //onsemi.com six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications whe

 0.6. Size:344K  willas
 mmbt3906dw1t1.pdf

FM120-M WILLAS MMBT3906DW1T1 THRU Dual Bias Resistor Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimi

 0.7. Size:193K  lrc
 lmbt3906dw1t1g.pdf

 0.8. Size:792K  kexin
 mmbt3906dw.pdf

SMD Type Transistors PNP Transistors MMBT3906DW (KMBT3906DW) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual PNP Transistors Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Curren

 0.9. Size:792K  kexin
 kmbt3906dw.pdf

SMD Type Transistors PNP Transistors MMBT3906DW (KMBT3906DW) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual PNP Transistors Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Curren