MBT3906DW Datasheet, Equivalent, Cross Reference Search
Type Designator: MBT3906DW
SMD Transistor Code: A2_A3
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-363
MBT3906DW Transistor Equivalent Substitute - Cross-Reference Search
MBT3906DW Datasheet (PDF)
mbt3906dw.pdf
MBT3906DW2 13Dual General Purpose Transistor654PNP+PNP Silicon123P b Lead(Pb)-Free45 6SOT-363(SC-88)PNP+PNPMaximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V -40 VdcCEOCollector-Base Voltage VCBO -40 VdcEmitter-Base Voltage VEBO -5.0 VdcCollector Current-Continuous ICmAdc-200Thermal CharacteristicsCharacteristics Symbol Max Uni
mbt3906dw1 smbt3906dw1.pdf
MBT3906DW1,SMBT3906DW1Dual General PurposeTransistorThe MBT3906DW1 device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mountapplicat
mbt3906dw1t2g.pdf
MBT3906DW1,SMBT3906DW1Dual General PurposeTransistorThe MBT3906DW1 device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mountapplicat
mbt3906dw1t1g smbt3906dw1t1g.pdf
MBT3906DW1T1G,SMBT3906DW1T1GDual General PurposeTransistorThe MBT3906DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mount
mbt3906dw1.pdf
MBT3906DW1Dual General PurposeTransistorThe MBT3906DW1 device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-363www.onsemi.comsix-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mountMARKINGapplications whe
mbt3906dw1t1.pdf
MBT3906DW1T1GDual General PurposeTransistorThe MBT3906DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-363http://onsemi.comsix-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mountapplications whe
mmbt3906dw1t1.pdf
FM120-M WILLAS MMBT3906DW1T1THRUDual Bias Resistor TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimi
lmbt3906dw1t1g.pdf
LESHAN RADIO COMPANY, LTD.Dual Bias ResistorLMBT3906DW1T1GTransistor654The LMBT3906DW1T1 device isa spinoff of our popularSOT23/SOT323 threeleaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT3631sixleaded surface mount package. By putting two discrete devices in23one package, this device is ideal for low
mmbt3906dw.pdf
SMD Type TransistorsPNP TransistorsMMBT3906DW (KMBT3906DW) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual PNP Transistors Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Curren
kmbt3906dw.pdf
SMD Type TransistorsPNP TransistorsMMBT3906DW (KMBT3906DW) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual PNP Transistors Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Curren
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
