PZT5551 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PZT5551
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.5 W
Tensión colector-base (Vcb): 180 V
Tensión colector-emisor (Vce): 160 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hFE): 80
Encapsulados: SOT223
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PZT5551 datasheet
pzt5551.pdf
UNISONIC TECHNOLOGIES CO., LTD PZT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage VCEO=160V * High current gain ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 PZT5551L-x-AA3-R PZT5551G-x-AA3-R SOT-223 B C E Tape Reel www.unisonic.com.tw 1of 4 Copyright 20
pzt5551.pdf
PZT5551 NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 4 1. BASE 2.COLLECTOR 3.EMITTER BASE 4.COLLECTOR 1 1 2 3 3 SOT-223 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Symbol Rating Value Unit V Collector-Emitter Voltage CEO V 160 VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 600 mA PD Total Device Disspation 1.5 W
pzt5551l3.pdf
Spec. No. C208L3 Issued Date 2004.09.21 CYStech Electronics Corp. Revised Date 2008.07.04 Page No. 1/5 General Purpose NPN Epitaxial Planar Transistor PZT5551L3 Description The PZT5551L3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BT
pzt559a.pdf
PZT559A PNP Silicon Silicon Planar Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOT-223 The PZT559A is designed for general purpose switching and amplifier applications. FEATURES 4 Amps continuous current, up to 10 Amps peak current. Excellent gain characteristic specified up to
Otros transistores... MJE13003B , MMBT3904E , MMBT3906E , MMDT2227DW , MSB709 , MSD601 , MXTA42 , PZT5401 , 2SD718 , PZT951 , S9012LT1 , S9013LT1 , S9014LT1 , S9015LT1 , SS8050LT1 , SS8550LT1 , W4401DW .
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