PZT5551 - Даташиты. Аналоги. Основные параметры

UNISONIC TECHNOLOGIES CO., LTD PZT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage VCEO=160V * High current gain ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 PZT5551L-x-AA3-R PZT5551G-x-AA3-R SOT-223 B C E Tape Reel www.unisonic.com.tw 1of 4 Copyright 20

PZT5551 NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 4 1. BASE 2.COLLECTOR 3.EMITTER BASE 4.COLLECTOR 1 1 2 3 3 SOT-223 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Symbol Rating Value Unit V Collector-Emitter Voltage CEO V 160 VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 600 mA PD Total Device Disspation 1.5 W

Spec. No. C208L3 Issued Date 2004.09.21 CYStech Electronics Corp. Revised Date 2008.07.04 Page No. 1/5 General Purpose NPN Epitaxial Planar Transistor PZT5551L3 Description The PZT5551L3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BT

PZT559A PNP Silicon Silicon Planar Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOT-223 The PZT559A is designed for general purpose switching and amplifier applications. FEATURES 4 Amps continuous current, up to 10 Amps peak current. Excellent gain characteristic specified up to

PZT559 PNP Silicon Planar Elektronische Bauelemente High Current Transistor RoHS Compliant Product SOT-223 Description The PZT559 is designed for general purpose switching and amplifier applications. Features * Excellent Gain Characteristic Specified Up To 3 Amps. Millimeter Millimeter REF. REF. * 4 Amps Continuous Current, Up To Min. Max. Min. Max. 10 Amps Peak Cu