SS8550LT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SS8550LT1
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar SS8550LT1
SS8550LT1 Datasheet (PDF)
ss8550lt1.pdf
SS8550LT1PNP General Purpose Transistors31P b Lead(Pb)-Free2SOT-23ValueVCEO-25-40-5.0-15003002.4 417-0.1-25-40-100-5.0-100-0.15 u-40-0.15 u-5.0WEITRON27-Jul-20121/2http://www.weitron.com.twSS8550LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Max UnitMinON CHARACTERISTICSDC
ss8550lt1.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SS8550LT1 TRANSISTOR (PNP) SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 3. COLLECTOR PCM: 0.2 W (Tamb=25) Collector current ICM: -1.5 A Collector-base voltage V(BR)CBO: -25 V Operating and storage junction temperature range TJ, Tstg: -55to +150 ELE
ss8550l ss8550h ss8550j.pdf
RUMW UMW SS8550SOT-23 Plastic-Encapsulate TransistorsSS8550 TRANSISTOR (PNP) SOT-23 FEATURES High Collector Current Complementary to SS8050 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBOV Collector-Emitter Voltage -25 V CEOV Emitter-Base Voltage -5 V EB
ss8550 ss8550l ss8550h ss8550j.pdf
SS8550 SOT-23 PNP Transistors321.BaseFeatures2.EmitterCollector Current: IC=-1.5A1 3.Collector Simplified outline(SOT-23)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -25 VEmitter-Base Voltage VEBO -5 VCollector Current -Continuous IC -1.5 ACollector Power Dissipation PC 0.3 WJunc
ss8550l ss8550h ss8550j.pdf
SS8550 TRANSISTOR (PNP) SOT 23 FEATURES High Collector Current Complementary to SS8050 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -40 V CBO3. COLLECTOR V Collector-Emitter Voltage -25 V CEOV Emitter-Base Voltage -5 V EBOIC Collector Current -1.5 A P Collector Power Diss
ss8550l ss8550h ss8550j.pdf
SS8550 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features SS8050 ; Complementary to SS8050 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package
ss8550l ss8550h ss8550j.pdf
SS8550 Features Complimentary to SS8050 Collector current: IC= -1.5A SOT-23 AMARKING: Y2Dim Min MaxCA0.37 0.51B C B1.20 1.40C2.30 2.50TOP VIEWB ED0.89 1.03DEGE0.45 0.60G1.78 2.05H H2.80 3.00J0.013 0.10KK0.903 1.10JL0.45 0.61M0.085 0.180MAXIMUM RATINGS (Ta=25 unless othe
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