MUN5111DW . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MUN5111DW
Código: 0A
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.187 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 35
Paquete / Cubierta: SOT363
- Selección de transistores por parámetros
MUN5111DW Datasheet (PDF)
mun5111dw.pdf

MUN5111DW Series6 546Dual Bias Resistor Transistor54R1R2PNP Silicon Q2123R Q21SOT-363(SC-88)R11 2 3( T =25 C unless otherwise noted)M aximum R atings ARating Symbol Value UnitCollector-Emitter Voltage V -50CEO VdcVdcCollector-Base Voltage VCBO -50Collector Current-Continuous IC mAdc-100Thermal CharacteristicsCharacteristics Symbo
mun5111dw1t1-d.pdf

MUN5111DW1T1G SeriesPreferred DevicesDual Bias ResistorTransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor with ahttp://onsemi.commonolithic bias network consisting of two resistors; a series base resistorand a base-emitter resistor. These digital transistors are designed to(3) (
mun5111dw1t1g mun5112dw1t1g mun5113dw1t1g mun5114dw1t1g mun5115dw1t1g mun5116dw1t1g mun5130dw1t1g mun5131dw1t1g.pdf

MUN5111DW1T1G Series,SMUN5111DW1T1G SeriesDual Bias ResistorTransistorsPNP Silicon Surface Mount Transistorshttp://onsemi.comwith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor with amonolithic bias network consisting of two resistors; a series base resistorand a base-emitter resistor. These digital transistors are designed to
nsvmun5111dw1t3g.pdf

MUN5111DW1,NSBA114EDXV6,NSBA114EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SA795A | 2SA1706T-AN | 3DG2413K | BC848CW-G | RT3YB7M | 2SA815
History: 2SA795A | 2SA1706T-AN | 3DG2413K | BC848CW-G | RT3YB7M | 2SA815



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2n3565 transistor | datasheet irfz44n | 2sd1047 transistor | mj802 | bu508a | bc560c | ksa1220ay | irf 830