MUN5213DW Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MUN5213DW  📄📄 

Código: 7C

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 47 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.187 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT363

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MUN5213DW datasheet

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MUN5213DW

MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series Dual Bias Resistor Transistors http //onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with SOT-363 a monolithic bias network consisting of two resistors; a series base CASE 419B STYLE 1 resistor and a base-emitter resistor. The

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MUN5213DW1, NSBC144EDXV6, NSBC144EDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 47 kW, R2 = 47 kW NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wit

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MUN5213DW

LESHAN RADIO COMPANY, LTD. Dual Bias ResistorTransistors LMUN5211DW1T1G NPN Silicon Surface Mount Transistors Series with Monolithic Bias Resistor Network S-LMUN5211DW1T1G Series The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. These 6 5 digital transistor

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