MUN5333DW . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MUN5333DW
   Código: 33
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 4 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.085

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.187 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SOT363

Búsqueda de reemplazo de transistor bipolar MUN5333DW

MUN5333DW Datasheet (PDF)

0.1. Size:305K onsemi
mun5333dw1 nsbc143zpdxv6 nsbc143zpdp6.pdf

Complementary BiasResistor TransistorsR1 = 4.7 kW, R2 = 47 kWNPN and PNP Transistors with MonolithicBias Resistor NetworkMUN5333DW1,www.onsemi.comNSBC143ZPDXV6,NSBC143ZPDP6PIN CONNECTIONS(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single t

0.2. Size:277K onsemi
nsvmun5333dw1t1g.pdf

MUN5311DW1T1G,SMUN5311DW1T1G,NSVMUN5311DW1T1G SeriesDual Bias ResistorTransistorshttp://onsemi.comhttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor NetworkSOT-363CASE 419BThe Bias Resistor Transistor (BRT) contains a single transistor withSTYLE 1a monolithic bias network consisting of two resistors; a series baseresistor and

0.3. Size:276K onsemi
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