2N5400S Todos los transistores

 ..1. Size:33K  kec
 2n5400s.pdf

SEMICONDUCTOR 2N5400S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 High Collector Breakdwon Voltage C 1.30 MAX 2 VCBO=-130V, VCEO=-120V 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Low Leakage Current. 1 G 1.90 H 0.95 ICBO=-100nA(Max.) @VCB=-100V J 0.

 8.1. Size:177K  motorola
 2n5400 2n5401.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5400/D Amplifier Transistors 2N5400 PNP Silicon * 2N5401 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit CASE 29 04, STYLE 1 TO 92 (TO 226AA) Collector Emitter Voltage VCEO 120 150 Vdc Collector Base Voltage VCBO 130 160 Vdc Emitter B

 8.2. Size:546K  fairchild semi
 2n5400.pdf

2N5400 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring high voltages. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 120 V VCBO Collector-Base Voltage 130 V VEBO Emitter-Base Voltage 5.0 V ICCollector Current - Continuous600mA Oper

 8.3. Size:56K  samsung
 2n5400.pdf

2N5400 S/S TR CD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung Electronics Printed in Korea. Page 1 (2N5400)

 8.4. Size:80K  central
 2n5400 2n5401.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 8.5. Size:375K  secos
 2n5400.pdf

2N5400 -0.6 A, -130 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES Switching and amplification in high voltage Applications such as telephony TO-92 Low current(max.600mA) High voltage(max.130V) G H Emitter Base Collector J A D Millimeter

 8.6. Size:149K  cdil
 2n5400.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N5400 TO-92 Plastic Package C B E Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCEO 120 V Collector Base Voltage VCBO 130 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 600 mA

 8.7. Size:32K  kec
 2n5400.pdf

SEMICONDUCTOR 2N5400 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS VCBO=-130V, VCEO=-120V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D ICBO=-100nA(Max.) @VCB=-100V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 VCE(sat)=-0.5V(

 8.8. Size:204K  lge
 2n5400.pdf

2N5400(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.130v) MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -130 V

 8.9. Size:194K  semtech
 2n5400 2n5401.pdf

2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors 2N5550 and 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C)

 8.10. Size:1285K  sprague
 2n5306 2n5306a 2n5307 2n5308 2n5308a 2n5309 2n5310 2n5354 2n5355 2n5356 2n5365 2n5366 2n5367 2n5400 2n5401 2n5418.pdf