2N5400S Datasheet and Replacement

SEMICONDUCTOR 2N5400STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.EL B LDIM MILLIMETERSFEATURES _+2.93 0.20AB 1.30+0.20/-0.15High Collector Breakdwon VoltageC 1.30 MAX2: VCBO=-130V, VCEO=-120V 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20Low Leakage Current.1G 1.90H 0.95: ICBO=-100nA(Max.) @VCB=-100VJ 0.

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5400/DAmplifier Transistors2N5400PNP Silicon*2N5401*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER123MAXIMUM RATINGSRating Symbol 2N5400 2N5401 UnitCASE 2904, STYLE 1TO92 (TO226AA)CollectorEmitter Voltage VCEO 120 150 VdcCollectorBase Voltage VCBO 130 160 VdcEmitterB

2N5400C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring high voltages. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 120 VVCBO Collector-Base Voltage 130 VVEBO Emitter-Base Voltage 5.0 VICCollector Current - Continuous600mAOper

2N5400S/S TRCD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung ElectronicsPrinted in Korea.Page : 1 (2N5400)

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2N5400 -0.6 A, -130 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES Switching and amplification in high voltage Applications such as telephony TO-92 Low current(max.600mA) High voltage(max.130V)G H Emitter Base CollectorJA DMillimeter

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N5400TO-92Plastic PackageCBEAmplifier TransistorABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector Emitter Voltage VCEO 120 VCollector Base Voltage VCBO 130 VEmitter Base Voltage VEBO 5.0 VCollector Current Continuous IC 600 mA

SEMICONDUCTOR 2N5400TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.B CFEATURES High Collector Breakdwon VoltageN DIM MILLIMETERS: VCBO=-130V, VCEO=-120VA 4.70 MAXEKLow Leakage Current. B 4.80 MAXGC 3.70 MAXD: ICBO=-100nA(Max.) @VCB=-100VD 0.45E 1.00Low Saturation VoltageF 1.27G 0.85: VCE(sat)=-0.5V(

2N5400(PNP) TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.130v) MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value Units VCBO Collector-Base Voltage -130 V

2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors 2N5550 and 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C)