KTA1040D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTA1040D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.DPAK FOR SURFACE MOUNT APPLICATIONS. AI C JFEATURESDIM MILLIMETERS_A 6.60 + 0.2Low Collector Saturation Voltage_B 6.10 + 0.2_C 5.0 + 0.2: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. _D 1.10 + 0.2_E 2.70 + 0.2_Straight Lead (IPAK, "L" Suffix) F 2.30 + 0.

SEMICONDUCTOR KTA1040D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.DPAK FOR SURFACE MOUNT APPLICATIONS. AI C JFEATURESDIM MILLIMETERS_A 6.60 + 0.2Low Collector Saturation Voltage_B 6.10 + 0.2_C 5.0 + 0.2: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. _D 1.10 + 0.2_E 2.70 + 0.2_Straight Lead (IPAK, "L" Suffix) F 2.30

SEMICONDUCTOR KTA1049TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.ACFEATURES DIM MILLIMETERSSLow Collector-Emitter Saturation Voltage_A 10.0 + 0.3_+B 15.0 0.3E: VCE(sat)=-2.0V(Max.).C _2.70 0.3+D 0.76+0.09/-0.05Complementary to KTC2028._E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L

SEMICONDUCTOR KTA1042D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.FEATURES AI C JLow Collector-Emitter Saturation VoltageDIM MILLIMETERS_: VCE(sat)=-2.0V(Max.). A 6.60 + 0.2_B 6.10 + 0.2_C 5.0 + 0.2Complementary to KTC2022D/L._D 1.10 + 0.2_E 2.70 + 0.2_F 2.30 + 0.1H 1.00 MAX_I 2.30 + 0.2_J 0.5 + 0.1_H K 2.00

SEMICONDUCTOR KTA1046TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORINDUSTRIAL USE. GENERAL PURPOSE APPLICATION.ACDIM MILLIMETERSSFEATURES_A 10.0 0.3+_+B 15.0 0.3Low Collector Saturation Voltage EC _2.70 0.3+D: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. 0.76+0.09/-0.05_E 3.2 0.2+Complementary to KTC2026._F 3.0 0.3+_12.0 0.3G +H 0.5+0

SEMICONDUCTOR KTA1045D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORLOW FREQUENCY POWER AMP,MEDIUM SPEED SWITCHING APPLICATIONS A I C JFEATURES DIM MILLIMETERS_A 6.60 + 0.2_B 6.10 + 0.2High breakdown voltage VCEO 120V, high current 1A._C 5.0 + 0.2_D 1.10 + 0.2Low saturation voltage and good linearity of hFE. _E 2.70 + 0.2_F 2.30 + 0.1H 1.00 MAXC

SEMICONDUCTOR KTA1042D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.FEATURES AI C JLow Collector-Emitter Saturation VoltageDIM MILLIMETERS_: VCE(sat)=-2.0V(Max.). A 6.60 + 0.2_B 6.10 + 0.2_C 5.0 + 0.2Complementary to KTC2022D/L._D 1.10 + 0.2_E 2.70 + 0.2_F 2.30 + 0.1H 1.00 MAX_I 2.30 + 0.2_J 0.5 + 0.1_H K 2.00

DIP Type TransistorsPNP TransistorsKTA1049Unit: mmTO-220F0.200.200.202.540.200.70 Features Low collector saturation voltage Complementary to KTC20280.202.761.47max0.200.500.200.801. Base2.54typ2. Collector2.54typ3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage V

DIP Type TransistorsPNP TransistorsKTA1046Unit: mmTO-220F0.200.200.202.540.200.70 Features Low saturation voltage and good linearity of hFE. Complementary to KTC2026 0.202.761.47max0.200.500.200.801. Base2.54typ2.54typ 2. Collector3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector -

isc Silicon PNP Power Transistors KTA1046DESCRIPTIONLow Saturation Voltage-: V = -1.0V(Max)@ (I = -2A, I = -0.2A)CE(sat) C BCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type KTC2026Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose applications .ABSOLUTE

isc Silicon PNP Power Transistor KTA1042DDESCRIPTIONLow Collector-Emitter saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -100 VCBOV Collector-Emitter Voltage -100