KTA1040L Todos los transistores

SEMICONDUCTOR KTA1040D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SURFACE MOUNT APPLICATIONS. A I C J FEATURES DIM MILLIMETERS _ A 6.60 + 0.2 Low Collector Saturation Voltage _ B 6.10 + 0.2 _ C 5.0 + 0.2 VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. _ D 1.10 + 0.2 _ E 2.70 + 0.2 _ Straight Lead (IPAK, "L" Suffix) F 2.30

SEMICONDUCTOR KTA1040D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SURFACE MOUNT APPLICATIONS. A I C J FEATURES DIM MILLIMETERS _ A 6.60 + 0.2 Low Collector Saturation Voltage _ B 6.10 + 0.2 _ C 5.0 + 0.2 VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. _ D 1.10 + 0.2 _ E 2.70 + 0.2 _ Straight Lead (IPAK, "L" Suffix) F 2.30 + 0.

SEMICONDUCTOR KTA1049 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Low Collector-Emitter Saturation Voltage _ A 10.0 + 0.3 _ + B 15.0 0.3 E VCE(sat)=-2.0V(Max.). C _ 2.70 0.3 + D 0.76+0.09/-0.05 Complementary to KTC2028. _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L

SEMICONDUCTOR KTA1042D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A I C J Low Collector-Emitter Saturation Voltage DIM MILLIMETERS _ VCE(sat)=-2.0V(Max.). A 6.60 + 0.2 _ B 6.10 + 0.2 _ C 5.0 + 0.2 Complementary to KTC2022D/L. _ D 1.10 + 0.2 _ E 2.70 + 0.2 _ F 2.30 + 0.1 H 1.00 MAX _ I 2.30 + 0.2 _ J 0.5 + 0.1 _ H K 2.00

SEMICONDUCTOR KTA1046 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR INDUSTRIAL USE. GENERAL PURPOSE APPLICATION. A C DIM MILLIMETERS S FEATURES _ A 10.0 0.3 + _ + B 15.0 0.3 Low Collector Saturation Voltage E C _ 2.70 0.3 + D VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. 0.76+0.09/-0.05 _ E 3.2 0.2 + Complementary to KTC2026. _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0

SEMICONDUCTOR KTA1045D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS A I C J FEATURES DIM MILLIMETERS _ A 6.60 + 0.2 _ B 6.10 + 0.2 High breakdown voltage VCEO 120V, high current 1A. _ C 5.0 + 0.2 _ D 1.10 + 0.2 Low saturation voltage and good linearity of hFE. _ E 2.70 + 0.2 _ F 2.30 + 0.1 H 1.00 MAX C

SEMICONDUCTOR KTA1042D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A I C J Low Collector-Emitter Saturation Voltage DIM MILLIMETERS _ VCE(sat)=-2.0V(Max.). A 6.60 + 0.2 _ B 6.10 + 0.2 _ C 5.0 + 0.2 Complementary to KTC2022D/L. _ D 1.10 + 0.2 _ E 2.70 + 0.2 _ F 2.30 + 0.1 H 1.00 MAX _ I 2.30 + 0.2 _ J 0.5 + 0.1 _ H K 2.00

DIP Type Transistors PNP Transistors KTA1049 Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features Low collector saturation voltage Complementary to KTC2028 0.20 2.76 1.47max 0.20 0.50 0.20 0.80 1. Base 2.54typ 2. Collector 2.54typ 3. Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage V

DIP Type Transistors PNP Transistors KTA1046 Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features Low saturation voltage and good linearity of hFE. Complementary to KTC2026 0.20 2.76 1.47max 0.20 0.50 0.20 0.80 1. Base 2.54typ 2.54typ 2. Collector 3. Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector -

isc Silicon PNP Power Transistors KTA1046 DESCRIPTION Low Saturation Voltage- V = -1.0V(Max)@ (I = -2A, I = -0.2A) CE(sat) C B Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Complement to Type KTC2026 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose applications . ABSOLUTE

isc Silicon PNP Power Transistor KTA1042D DESCRIPTION Low Collector-Emitter saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -100 V CBO V Collector-Emitter Voltage -100