KTA1042L Datasheet. Equivalente

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 kta1042d kta1042l.pdf

SEMICONDUCTOR KTA1042D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A I C J Low Collector-Emitter Saturation Voltage DIM MILLIMETERS _ VCE(sat)=-2.0V(Max.). A 6.60 + 0.2 _ B 6.10 + 0.2 _ C 5.0 + 0.2 Complementary to KTC2022D/L. _ D 1.10 + 0.2 _ E 2.70 + 0.2 _ F 2.30 + 0.1 H 1.00 MAX _ I 2.30 + 0.2 _ J 0.5 + 0.1 _ H K 2.00

 7.1. Size:395K  kec
 kta1042d l.pdf

SEMICONDUCTOR KTA1042D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A I C J Low Collector-Emitter Saturation Voltage DIM MILLIMETERS _ VCE(sat)=-2.0V(Max.). A 6.60 + 0.2 _ B 6.10 + 0.2 _ C 5.0 + 0.2 Complementary to KTC2022D/L. _ D 1.10 + 0.2 _ E 2.70 + 0.2 _ F 2.30 + 0.1 H 1.00 MAX _ I 2.30 + 0.2 _ J 0.5 + 0.1 _ H K 2.00

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 kta1042d.pdf

isc Silicon PNP Power Transistor KTA1042D DESCRIPTION Low Collector-Emitter saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -100 V CBO V Collector-Emitter Voltage -100

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 kta1049.pdf

SEMICONDUCTOR KTA1049 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Low Collector-Emitter Saturation Voltage _ A 10.0 + 0.3 _ + B 15.0 0.3 E VCE(sat)=-2.0V(Max.). C _ 2.70 0.3 + D 0.76+0.09/-0.05 Complementary to KTC2028. _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L

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 kta1046.pdf

SEMICONDUCTOR KTA1046 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR INDUSTRIAL USE. GENERAL PURPOSE APPLICATION. A C DIM MILLIMETERS S FEATURES _ A 10.0 0.3 + _ + B 15.0 0.3 Low Collector Saturation Voltage E C _ 2.70 0.3 + D VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. 0.76+0.09/-0.05 _ E 3.2 0.2 + Complementary to KTC2026. _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0

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 kta1040d l.pdf

SEMICONDUCTOR KTA1040D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SURFACE MOUNT APPLICATIONS. A I C J FEATURES DIM MILLIMETERS _ A 6.60 + 0.2 Low Collector Saturation Voltage _ B 6.10 + 0.2 _ C 5.0 + 0.2 VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. _ D 1.10 + 0.2 _ E 2.70 + 0.2 _ Straight Lead (IPAK, "L" Suffix) F 2.30 + 0.

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 kta1045d l.pdf

SEMICONDUCTOR KTA1045D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS A I C J FEATURES DIM MILLIMETERS _ A 6.60 + 0.2 _ B 6.10 + 0.2 High breakdown voltage VCEO 120V, high current 1A. _ C 5.0 + 0.2 _ D 1.10 + 0.2 Low saturation voltage and good linearity of hFE. _ E 2.70 + 0.2 _ F 2.30 + 0.1 H 1.00 MAX C

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 kta1040d kta1040l.pdf

SEMICONDUCTOR KTA1040D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SURFACE MOUNT APPLICATIONS. A I C J FEATURES DIM MILLIMETERS _ A 6.60 + 0.2 Low Collector Saturation Voltage _ B 6.10 + 0.2 _ C 5.0 + 0.2 VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. _ D 1.10 + 0.2 _ E 2.70 + 0.2 _ Straight Lead (IPAK, "L" Suffix) F 2.30

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 kta1049.pdf

DIP Type Transistors PNP Transistors KTA1049 Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features Low collector saturation voltage Complementary to KTC2028 0.20 2.76 1.47max 0.20 0.50 0.20 0.80 1. Base 2.54typ 2. Collector 2.54typ 3. Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage V

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 kta1046.pdf

DIP Type Transistors PNP Transistors KTA1046 Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features Low saturation voltage and good linearity of hFE. Complementary to KTC2026 0.20 2.76 1.47max 0.20 0.50 0.20 0.80 1. Base 2.54typ 2.54typ 2. Collector 3. Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector -

 8.8. Size:216K  inchange semiconductor
 kta1046.pdf

isc Silicon PNP Power Transistors KTA1046 DESCRIPTION Low Saturation Voltage- V = -1.0V(Max)@ (I = -2A, I = -0.2A) CE(sat) C B Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Complement to Type KTC2026 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose applications . ABSOLUTE