KTA1049 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTA1049
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30 MHz
Capacitancia de salida (Cc): 90 pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: TO220IS
Búsqueda de reemplazo de transistor bipolar KTA1049
KTA1049 Datasheet (PDF)
kta1049.pdf
SEMICONDUCTOR KTA1049TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.ACFEATURES DIM MILLIMETERSSLow Collector-Emitter Saturation Voltage_A 10.0 + 0.3_+B 15.0 0.3E: VCE(sat)=-2.0V(Max.).C _2.70 0.3+D 0.76+0.09/-0.05Complementary to KTC2028._E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L
kta1049.pdf
DIP Type TransistorsPNP TransistorsKTA1049Unit: mmTO-220F0.200.200.202.540.200.70 Features Low collector saturation voltage Complementary to KTC20280.202.761.47max0.200.500.200.801. Base2.54typ2. Collector2.54typ3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage V
kta1042d l.pdf
SEMICONDUCTOR KTA1042D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.FEATURES AI C JLow Collector-Emitter Saturation VoltageDIM MILLIMETERS_: VCE(sat)=-2.0V(Max.). A 6.60 + 0.2_B 6.10 + 0.2_C 5.0 + 0.2Complementary to KTC2022D/L._D 1.10 + 0.2_E 2.70 + 0.2_F 2.30 + 0.1H 1.00 MAX_I 2.30 + 0.2_J 0.5 + 0.1_H K 2.00
kta1046.pdf
SEMICONDUCTOR KTA1046TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORINDUSTRIAL USE. GENERAL PURPOSE APPLICATION.ACDIM MILLIMETERSSFEATURES_A 10.0 0.3+_+B 15.0 0.3Low Collector Saturation Voltage EC _2.70 0.3+D: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. 0.76+0.09/-0.05_E 3.2 0.2+Complementary to KTC2026._F 3.0 0.3+_12.0 0.3G +H 0.5+0
kta1040d l.pdf
SEMICONDUCTOR KTA1040D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.DPAK FOR SURFACE MOUNT APPLICATIONS. AI C JFEATURESDIM MILLIMETERS_A 6.60 + 0.2Low Collector Saturation Voltage_B 6.10 + 0.2_C 5.0 + 0.2: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. _D 1.10 + 0.2_E 2.70 + 0.2_Straight Lead (IPAK, "L" Suffix) F 2.30 + 0.
kta1045d l.pdf
SEMICONDUCTOR KTA1045D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORLOW FREQUENCY POWER AMP,MEDIUM SPEED SWITCHING APPLICATIONS A I C JFEATURES DIM MILLIMETERS_A 6.60 + 0.2_B 6.10 + 0.2High breakdown voltage VCEO 120V, high current 1A._C 5.0 + 0.2_D 1.10 + 0.2Low saturation voltage and good linearity of hFE. _E 2.70 + 0.2_F 2.30 + 0.1H 1.00 MAXC
kta1042d kta1042l.pdf
SEMICONDUCTOR KTA1042D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.FEATURES AI C JLow Collector-Emitter Saturation VoltageDIM MILLIMETERS_: VCE(sat)=-2.0V(Max.). A 6.60 + 0.2_B 6.10 + 0.2_C 5.0 + 0.2Complementary to KTC2022D/L._D 1.10 + 0.2_E 2.70 + 0.2_F 2.30 + 0.1H 1.00 MAX_I 2.30 + 0.2_J 0.5 + 0.1_H K 2.00
kta1040d kta1040l.pdf
SEMICONDUCTOR KTA1040D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.DPAK FOR SURFACE MOUNT APPLICATIONS. AI C JFEATURESDIM MILLIMETERS_A 6.60 + 0.2Low Collector Saturation Voltage_B 6.10 + 0.2_C 5.0 + 0.2: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. _D 1.10 + 0.2_E 2.70 + 0.2_Straight Lead (IPAK, "L" Suffix) F 2.30
kta1046.pdf
DIP Type TransistorsPNP TransistorsKTA1046Unit: mmTO-220F0.200.200.202.540.200.70 Features Low saturation voltage and good linearity of hFE. Complementary to KTC2026 0.202.761.47max0.200.500.200.801. Base2.54typ2.54typ 2. Collector3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector -
kta1046.pdf
isc Silicon PNP Power Transistors KTA1046DESCRIPTIONLow Saturation Voltage-: V = -1.0V(Max)@ (I = -2A, I = -0.2A)CE(sat) C BCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type KTC2026Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose applications .ABSOLUTE
kta1042d.pdf
isc Silicon PNP Power Transistor KTA1042DDESCRIPTIONLow Collector-Emitter saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -100 VCBOV Collector-Emitter Voltage -100
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
