KTA1282 Todos los transistores

SEMICONDUCTOR KTA1282 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURES Complementary to KTC3210. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25 ) G C 3.70 MAX D CHARACTERISTIC SYMBOL RATING UNIT D 0.45 E 1.00 F 1.27 VCBO -30 V Collector-Base Voltage G 0.85 H 0.45 VCEO -30 V Collector-Emitter Voltage _ H J 14.00 +

SEMICONDUCTOR KTA1281 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES Low Collector Saturation Voltage VCE(sat)=-0.5V(Max.) (IC=-1A) High Speed Switching Time tstg=1.0 S(Typ.) Complementary to KTC3209. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO -50 V Collector-Base Voltage VCEO

KTA1281 TO-92MOD Transistor (PNP) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 6.200 Low Collector Saturation Voltage VCE(sat)=-0.5V(Max.)(IC=-1A) High Speed Switching time tstg=1.0 S(Typ.). 8.400 8.800 Complementary to KTC3209. 0.900 1.100 0.400 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.600 Symbol Parameter Value Units 13.8

KTA1281 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 5.100 2 3 1 Features 7.800 Low Collector Saturation Voltage VCE(sat)=-0.5V(Max.)(IC=-1A) 8.200 High Speed Switching time tstg=1.0 S(Typ.). 0.600 Complementary to KTC3209. 0.800 0.350 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.550 13.800 Symbol Parameter Value Units 14.2

DIP Type Transistors PNP Transistors KTA1281 TO-92L Unit mm 4.9 0.2 0.7 0.1 Features 0.45 0.1 Low Collector Saturation Voltage High Speed Switching Time 2 1 3 Comlementary to KTC3209 1.27 2.54 0.1 1.60 (max) Emitter 1. 2.Collector 3.Base 4.0(min) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage V