KTA1282 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTA1282TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. B CFEATURES Complementary to KTC3210.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXMAXIMUM RATING (Ta=25 ) GC 3.70 MAXDCHARACTERISTIC SYMBOL RATING UNIT D 0.45E 1.00F 1.27VCBO -30 VCollector-Base VoltageG 0.85H 0.45VCEO -30 VCollector-Emitter Voltage_HJ 14.00 +

SEMICONDUCTOR KTA1281TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORPOWER AMPLIFIER APPLICATIONS.POWER SWITCHING APPLICATIONS. FEATURESLow Collector Saturation Voltage : VCE(sat)=-0.5V(Max.) (IC=-1A)High Speed Switching Time : tstg=1.0S(Typ.)Complementary to KTC3209.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -50 VCollector-Base VoltageVCEO

KTA1281 TO-92MOD Transistor (PNP)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE Features5.8006.200 Low Collector Saturation Voltage: VCE(sat)=-0.5V(Max.)(IC=-1A) High Speed Switching time: tstg=1.0 S(Typ.). 8.4008.800Complementary to KTC3209. 0.9001.1000.400MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.600Symbol Parameter Value Units13.8

KTA1281 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features7.800 Low Collector Saturation Voltage: VCE(sat)=-0.5V(Max.)(IC=-1A) 8.200 High Speed Switching time: tstg=1.0 S(Typ.). 0.600Complementary to KTC3209. 0.8000.350MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.55013.800Symbol Parameter Value Units14.2

DIP Type TransistorsPNP TransistorsKTA1281TO-92LUnit:mm4.9 0.20.7 0.1 Features0.45 0.1 Low Collector Saturation Voltage High Speed Switching Time21 3 Comlementary to KTC32091.27 2.54 0.11.60 (max)Emitter1.2.Collector3.Base4.0(min) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage V