KTA1705 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTA1705
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 40 pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar KTA1705
KTA1705 Datasheet (PDF)
kta1705.pdf
SEMICONDUCTOR KTA1705TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORAUDIO AMPLIFIER, VOLTAGE REGULATOR ABDC-DC CONVERTER, RELAY DRIVERDCEFEATURESFLow Saturation Voltage.: VCE(sat) -0.8V (IC=-2A, IB=-0.2A)GExcellent hFE Linearity and high hFE. H: hFE:70 240 (VCE=-2V, IC=-0.5A)DIM MILLIMETERSJA 8.3 MAXComplementary to KTC2804.KB 5.8LC 0.7_+D
kta1709.pdf
SEMICONDUCTOR KTA1709TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSTROBO FLASH APPLICATION.ABHIGH CURRENT APPLICATION.DCEFEATURESFhFE=100 320 (VCE=-2V, IC=-0.5A).Low Collector Saturation Voltage. G: VCE(sat)=-0.5V (IC=-3A, IB=-75mA). HDIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1MAXIMUM RATING (Ta=25 )E 3.5_+F 11.0 0.3CHARACTER
kta1703.pdf
SEMICONDUCTOR KTA1703TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION.ABDC-DC CONVERTER.DCLOW POWER SWITCHING REGULATOR.EFFEATURES High Breakdown Voltage. G: VCEO=-400VHLow Collector Saturation Voltage DIM MILLIMETERSJA 8.3 MAX: VCE(sat)=-1V(max.), (IC=-100mA, IB=-10mA)KB 5.8LHigh Speed Switching. C 0.7_+D 3.2 0.1E
kta1704.pdf
SEMICONDUCTOR KTA1704TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORAUDIO FREQUENCY POWER AMPLIFIERABHIGH FREQUENCY POWER AMPLIFIER DCEFEATURESFComplementary to KTC2803.GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBO -120 VCollector-Base Voltage_+F 11.0 0.3G 2.9 M
kta1700.pdf
SEMICONDUCTOR KTA1700TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION. ABDCFEATURESEHigh Transition Frequency : fT=100MHz(Typ.).FComplementary to KTC2800. GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBO -160 VCollector-Base Voltage_+F 11.0 0.3
kta1700.pdf
isc Silicon PNP Power Transistor KTA1700DESCRIPTIONHigh Collector-Emitter Breakdown VoltageV = -160V(Min)CEOComplement to Type KTC2800Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -160 VCBO
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: BC513A | 2N1252A
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050