KTA1759 Todos los transistores

SEMICONDUCTOR KTA1759 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES High Breakdown Voltage. A C H G DIM MILLIMETERS A 4.70 MAX _ + B 2.50 0.20 MAXIMUM RATING (Ta=25 ) C 1.70 MAX D D D 0.45+0.15/-0.10 CHARACTERISTIC SYMBOL RATING UNIT K E 4.25 MAX _ + F F F 1.50 0.10 VCBO -400 V Collector-Base Voltage G 0.40 TYP H 1.75 MAX VC

SEMICONDUCTOR KTA1715 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR POWER AMPLIFIER APPLICATION. A B POWER SWITCHING APPLICATION. D C E FEATURES F Low Collector Saturation Voltage VCE(sat)=-0.5V(Max.) (IC=-1A) G High Speed Switching Time tstg=1 S(Typ.) H Complementary to KTC2814. DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D 3.2 0.1 E 3.5 _ + F 11.0 0.3

SEMICONDUCTOR KTA1709 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR STROBO FLASH APPLICATION. A B HIGH CURRENT APPLICATION. D C E FEATURES F hFE=100 320 (VCE=-2V, IC=-0.5A). Low Collector Saturation Voltage. G VCE(sat)=-0.5V (IC=-3A, IB=-75mA). H DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D 3.2 0.1 MAXIMUM RATING (Ta=25 ) E 3.5 _ + F 11.0 0.3 CHARACTER

SEMICONDUCTOR KTA1705 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO AMPLIFIER, VOLTAGE REGULATOR A B DC-DC CONVERTER, RELAY DRIVER D C E FEATURES F Low Saturation Voltage. VCE(sat) -0.8V (IC=-2A, IB=-0.2A) G Excellent hFE Linearity and high hFE. H hFE 70 240 (VCE=-2V, IC=-0.5A) DIM MILLIMETERS J A 8.3 MAX Complementary to KTC2804. K B 5.8 L C 0.7 _ + D

SEMICONDUCTOR KTA1703 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. A B DC-DC CONVERTER. D C LOW POWER SWITCHING REGULATOR. E F FEATURES High Breakdown Voltage. G VCEO=-400V H Low Collector Saturation Voltage DIM MILLIMETERS J A 8.3 MAX VCE(sat)=-1V(max.), (IC=-100mA, IB=-10mA) K B 5.8 L High Speed Switching. C 0.7 _ + D 3.2 0.1 E

SEMICONDUCTOR KTA1718D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. A I C J FEATURES DIM MILLIMETERS _ A 6.60 + 0.2 _ Low Collector Saturation Voltage B 6.10 + 0.2 _ C 5.0 + 0.2 _ VCE(sat)=-0.5V(Max.) (IC=-1A) D 1.10 + 0.2 _ E 2.70 + 0.2 _ F 2.30 + 0.1 High Speed Switching Time tstg=1 S(Typ.) H 1.00 MAX

SEMICONDUCTOR KTA1704 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER A B HIGH FREQUENCY POWER AMPLIFIER D C E FEATURES F Complementary to KTC2803. G H DIM MILLIMETERS J A 8.3 MAX MAXIMUM RATING (Ta=25 ) K B 5.8 L C 0.7 CHARACTERISTIC SYMBOL RATING UNIT _ + D 3.2 0.1 E 3.5 VCBO -120 V Collector-Base Voltage _ + F 11.0 0.3 G 2.9 M

SEMICONDUCTOR KTA1725 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A C FEATURES DIM MILLIMETERS S Complementary to KTC4511. _ A 10.0 + 0.3 _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L R K _ 3.7 0.2 + L MAXIMUM RATING (Ta=25 ) 1.2+0.25/-

SEMICONDUCTOR KTA1700 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. A B D C FEATURES E High Transition Frequency fT=100MHz(Typ.). F Complementary to KTC2800. G H DIM MILLIMETERS J A 8.3 MAX MAXIMUM RATING (Ta=25 ) K B 5.8 L C 0.7 CHARACTERISTIC SYMBOL RATING UNIT _ + D 3.2 0.1 E 3.5 VCBO -160 V Collector-Base Voltage _ + F 11.0 0.3

isc Silicon PNP Power Transistor KTA1700 DESCRIPTION High Collector-Emitter Breakdown Voltage V = -160V(Min) CEO Complement to Type KTC2800 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -160 V CBO