KTA2014V . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTA2014VTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. EFEATURESBExcellent hFE Linearity: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).DIM MILLIMETERS2_Low Noise : NF=1dB(Typ.), 10dB(Max.). A 1.2 +0.05_B 0.8 +0.05Complementary to KTC4075V. 13_C 0.5 + 0.05_D 0.3 + 0.05Very Small Package._E 1.2 + 0.05

KTA2014-OMCCMicro Commercial ComponentsTMKTA2014-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933KTA2014-GRFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNPRoHS Compliant. See ordering information) Low frequency power amplifier applicationPlastic-Encapsulate Power switching

KTA2014 -0.15A , -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES Low frequency power amplifier application A Power switching application L33Top View C BCLASSIFICATION OF hFE 11 22K EProduct-Rank KTA2014-O KTA2014-Y KTA2014-GR Range 70~140 120~240

SEMICONDUCTOR KTA2014ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. EFEATURESBDIM MILLIMETERSExcellent hFE Linearity_+A 1.60 0.10D: hFE(0.1mA)/hFE(2mA)=0.95(Typ.). _+2 B 0.85 0.10_+C 0.70 0.10Low Noise : NF=1dB(Typ.), 10dB(Max.).31D 0.27+0.10/-0.05_Complementary to KTC4075E. E 1.60 0.10+_+

SEMICONDUCTOR KTA2014FTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURESEExcellent hFE LinearityB: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).Low Noise : NF=1dB(Typ.), 10dB(Max.).Complementary to KTC4075F. DIM MILLIMETERS2_A 0.6 + 0.05Thin Fine Pitch Small Package.3 _+B 0.8 0.05C 0.38+0.02/-0.041_+D

SEMICONDUCTOR KTA2014TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. EFEATURESM B MDIM MILLIMETERSExcellent hFE Linearity_+A 2.00 0.20D2_: hFE(0.1mA)/hFE(2mA)=0.95(Typ.). B 1.25 0.15+_+C 0.90 0.103Low Noise : NF=1dB(Typ.), 10dB(Max.). 1D 0.3+0.10/-0.05_+E 2.10 0.20Complementary to KTC4075

KTA2014TRANSISTOR (PNP) SOT-323 FEATURES Low frequency power amplifier application 1. BASE 2. EMITTER Power switching application 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current Continuous 150 m

KTA2014 SOT-323 Transistor(PNP)1. BASE SOT-3232. EMITTER 3. COLLECTOR Features Low frequency power amplifier application Power switching application MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)

SMD Type TransistorsPNP TransistorsKTA2014 Features Excellent hFE Linearity Low Noise Small Package Complementary to KTC40751.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector Current - Cont