KTC2825D Todos los transistores

SEMICONDUCTOR KTC2825D TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LED DRIVE APPLICATION FEATURES A H Adoption of MBIT processes. C J Low collector-to-emitter saturation voltage. DIM MILLIMETERS _ Fast switching speed. A 6.6 0.2 + _ 6.1 0.2 B + _ C 5.0 0.2 + _ D 1.1 0.2 + _ 2.7 0.2 E + _ + F 2.3 0.1 M G 1.0 MAX _ 2.3 + 0.2 H N _ + J 0.5 0.1 _ G K 1.0

SEMICONDUCTOR KTC2815D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. A I C J FEATURES DIM MILLIMETERS _ A 6.60 + 0.2 Low Collector Saturation Voltage _ B 6.10 + 0.2 _ C 5.0 + 0.2 VCE(sat)=0.5V(Max.) (IC=1A) _ D 1.10 + 0.2 _ E 2.70 + 0.2 _ F 2.30 + 0.1 High Speed Switching Time tstg=1 S(Typ.) H 1.00 MAX

SEMICONDUCTOR KTC2814 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLIFIER APPLICATION. A B POWER SWITCHING APPLICATION. D C E FEATURES F Low Collector Saturation Voltage VCE(sat)=0.5V(Max.) (IC=1A) G High Speed Switching Time tstg=1.0 S(Typ.) H Complementary to KTA1715. DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D 3.2 0.1 E 3.5 _ + F 11.0 0.3

SEMICONDUCTOR KTC2803 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO FREQUENCY, HIGH FREQUENCY A B POWER AMPLIFIER D C E FEATURES F Complementary to KTA1704. G H DIM MILLIMETERS J A 8.3 MAX MAXIMUM RATING (Ta=25 ) K B 5.8 L C 0.7 CHARACTERISTIC SYMBOL RATING UNIT _ + D 3.2 0.1 E 3.5 VCBO Collector-Base Voltage 120 V _ + F 11.0 0.3 G 2.9 MAX VCEO Coll

SEMICONDUCTOR KTC2875 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FOR MUTING AND SWITCHING APPLICATION. E FEATURES L B L High Emitter-Base Voltage VEBO=25V(Min.) DIM MILLIMETERS _ + A 2.93 0.20 High Reverse hFE B 1.30+0.20/-0.15 C 1.30 MAX Reverse hFE=150(Typ.) (VCE=-2V, IC=-2mA) 2 3 D 0.40+0.15/-0.05 Low on Resistance RON=1 (Typ.), (IB=5mA) E 2.40+0.30/-0.20

SEMICONDUCTOR KTC2801 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR COLOR TV CHROMA OUTPUT APPLICATION. A B COLOR TV HORIZONTAL DRIVE APPLICATION. D C E FEAUTRES F High Voltage VCEO=300V. Small Collector Output Capacitance Cob=4.0pF(Max.). G H DIM MILLIMETERS J A 8.3 MAX K B 5.8 L MAXIMUM RATING (Ta=25 ) C 0.7 _ + D 3.2 0.1 CHARACTERISTIC SYMBOL RATING UNIT E 3.5

SEMICONDUCTOR KTC2804 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO AMPLIFIER, VOLTAGE REGULATOR A B DC-DC CONVERTER, RELAY DRIVER D C E FEATURES F Low Saturation Voltage. VCE(sat) 0.8V (IC=2A, IB=0.2A) G Excellent hFE Linearity and high hFE. H hFE 70 240 (VCE=2V, IC=0.5A) DIM MILLIMETERS J A 8.3 MAX Complementary to KTA1705. K B 5.8 L C 0.7 _ + D 3.2 0

KTC2874 SEMICONDUCTOR SILICON NPN TRANSISTOR TECHNICAL DATA EPITAXIAL PLANAR TYPE FOR MUTING AND SWITCHING APPLICATION. B C FEATURES High Emitter-Base Voltage VEBO=25V(Min.) High Reverse hFE N DIM MILLIMETERS A 4.70 MAX E Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) K B 4.80 MAX G C 3.70 MAX D Low on Resistance RON=1 (Typ.), (IB=5mA) D 0.45 E 1.00 F 1.27 G 0.85 H 0.45

KTC2876 SEMICONDUCTOR SILICON NPN TRANSISTOR TECHNICAL DATA EPITAXIAL PLANAR TYPE FOR MUTING AND SWITCHING APPLICATION. FEATURES B High Emitter-Base Voltage VEBO=25V(Min.) High Reverse hFE Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) DIM MILLIMETERS O A 3.20 MAX Low on Resistance RON=1 (Typ.), (IB=5mA) H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C

SEMICONDUCTOR KTC2800 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. A B D C FEATURES E High Transition Frequency fT=100MHz(Typ.). F Complementary to KTA1700. G H DIM MILLIMETERS J A 8.3 MAX MAXIMUM RATING (Ta=25 ) K B 5.8 L C 0.7 CHARACTERISTIC SYMBOL RATING UNIT _ + D 3.2 0.1 E 3.5 VCBO Collector-Base Voltage 160 V _ + F 11.0 0.3 G