KTC3210 Todos los transistores

SEMICONDUCTOR KTC3210 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURES Complementary to KTA1282. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25 ) G C 3.70 MAX D CHARACTERISTIC SYMBOL RATING UNIT D 0.45 E 1.00 F 1.27 VCBO Collector-Base Voltage 30 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 30 V _ H J 14.00 + 0

SEMICONDUCTOR KTC3211 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE Complementary to KTA1283. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25 ) G C 3.70 MAX D CHARACTERISTIC SYMBOL RATING UNIT D 0.45 E 1.00 F 1.27 VCBO Collector-Base Voltage 40 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 25 V _ H J 14.00 + 0.

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth KTC3205 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features NPN Power Dissipation 1W (Tamb=25 ) Collector Current 2A Plastic-Encapsulate Collector-base Voltage 30V Epoxy meets UL 94 V-0 flammability rating Transistor Moisture Sensitivity Level 1 Ma

KTC3265 0.8A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE A High DC current gain L Complementary to KTA1298 3 3 Top View C B 1 1 2 2 K E CLASSIFICATION OF hFE D Product-Rank KTC3265-O KTC3265-Y H J F G Range 100 200 160 320 Marking Code EO EY

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTC3202 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER General Purpose Application Switching Application 2. COLLECTOR 3. BASE Equivalent Circuit

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3265 TRANSISTOR (NPN) FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO E

SEMICONDUCTOR KTC3227 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. B D FEATURES Complementary to KTA1274. DIM MILLIMETERS P DEPTH 0.2 A 7.20 MAX B 5.20 MAX C C 0.60 MAX S MAXIMUM RATING (Ta=25 ) D 2.50 MAX Q E 1.15 MAX K CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 1.70 MAX VCBO Collector-Base Voltage 80 V H 0.55 MAX FF _ J 14.00 + 0.50

SEMICONDUCTOR KTC3204 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B Complementary to KTA1272. DIM MILLIMETERS O A 3.20 MAX H M B 4.30 MAX C 0.55 MAX MAXIMUM RATING (Ta=25 ) _ D 2.40 + 0.15 E 1.27 CHARACTERISTIC SYMBOL RATING UNIT F 2.30 C _ + G 14.00 0.50 VCBO Collector-Base Voltage 35 V H 0.60 MAX J 1.05 E E VCEO Collecto

SEMICONDUCTOR KTC3203 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURES Complementary to KTA1271. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25 ) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 35 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 30 V _ H J 14.

SEMICONDUCTOR KTC3266 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. B C FEATURES Low Saturation Voltage. VCE(sat)=0.5V(Max.) at IC=2A N DIM MILLIMETERS Complementary to KTA1296. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00 + 0.50 CHARACTE

SEMICONDUCTOR KTC3200 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. B C FEATURES The KTC3200 is a transistor for low frequency and low noise applications. This device is designed to ower noise figure in the region of low signal source impedance, and to lower the pulse noise. N DIM MILLIMETERS This is recommended for the first stages of equalizer

SEMICONDUCTOR KTC3295 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE E L B L High hFE hFE=600 3600. DIM MILLIMETERS Noise Figure 0.5dB(Typ.) at f=100Hz. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 MAXIMUM RATING (Ta=25 ) J 0.13+0.10/-0.05 K 0.00 0.10 CHARACTER

SEMICONDUCTOR KTC3226 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APLICATION. B D FEATURES High DC Current Gain and Excellent hFE Linearity DIM MILLIMETERS P hFE(1)=140 600 (VCE=1V, IC=0.5A) DEPTH 0.2 A 7.20 MAX hFE(2)=70(Min.), 200(Typ.) (VCE=1V, IC=2A). B 5.20 MAX C C 0.60 MAX S Low Saturation Voltage D 2.50 MAX Q E 1.15 MAX

SEMICONDUCTOR KTC3228 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR COLOR TV VERT. DEFELECTION OUTPUT APPLICATION. COLOR TV CLASS B SOUND OUTPUT APPLICATION. FEATURES High Voltage VCEO=160V. Large Continuous Collector Current Capability. Recommended for Vert. Deflection Output & Sound Output Applications for Line Operated TV. Complementary to KTA1275. _ + _ + MAXIMUM R

SEMICONDUCTOR KTC3203A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B C Complementary to KTA1271A N DIM MILLIMETERS A 4.70 MAX MAXIMUM RATING (Ta=25 ) E K B 4.80 MAX G C 3.70 MAX CHARACTERISTIC SYMBOL RATING UNIT D D 0.45 E 1.00 VCBO Collector-Base Voltage 35 V F 1.27 G 0.85 VCEO Collector-Emitter Voltage 30 V H 0.45 _ H J 14.

SEMICONDUCTOR KTC3207 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE SWITCHING APPLICATION. COLOR TV HORIZONTAL DIRVER APPLICATION. B D COLOR TV CHROMA OUTPUT APPLICATION. FEATURES DIM MILLIMETERS P High Voltage V(BR)CEO=300V. DEPTH 0.2 A 7.20 MAX Small Collector Output Capacitance Cob=3.0pF(Typ.). B 5.20 MAX C C 0.60 MAX S D 2.50 MAX Q E 1.15 MAX K F 1.27 G

SEMICONDUCTOR KTC3207T TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE SWITCHING APPLICATION. COLOR TV HORIZONTAL DRIVER APPLICATION. COLOR TV CHROMA OUTPUT APPLICATION. E B K DIM MILLIMETERS FEATURES _ A 2.9 + 0.2 B 1.6+0.2/-0.1 High Voltage V(BR)CEO=300V _ C 0.70 + 0.05 2 3 Small Collector Output Capacitance Cob=3.0pF(Typ.) _ D 0.4 + 0.1 E 2.8+0.2/-0.3 Comp

SEMICONDUCTOR KTC3202 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity hFE(2)=25(Min.) at VCE=6V, IC=400mA. N DIM MILLIMETERS Complementary to KTA1270. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00 + 0.50 CHARACTERI

SEMICONDUCTOR KTC3209 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES Low Collector Saturation Voltage VCE(sat)=0.5V(Max.) (IC=1A) High Speed Switching Time tstg=1.0 S(Typ.) Complementary to KTA1281. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emi

SEMICONDUCTOR KTC3205 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B D FEATURES Complementary to KTA1273. DIM MILLIMETERS P DEPTH 0.2 A 7.20 MAX B 5.20 MAX C C 0.60 MAX S MAXIMUM RATING (Ta=25 ) D 2.50 MAX Q E 1.15 MAX K CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 1.70 MAX VCBO Collector-Base Voltage 30 V H 0.55 MAX FF _ J 14.00 + 0.50 VCE

SEMICONDUCTOR KTC3265 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS High DC Current Gain hFE=100 320. _ + 2.93 0.20 A B 1.30+0.20/-0.15 Low Saturation Voltage C 1.30 MAX 2 VCE(sat)=0.4V(Max.) (IC=500mA, IB=20mA). 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Suitable f

SEMICONDUCTOR KTC3206 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR BLACK AND WHITE TV VIDEO OUTPUT APLICATION. HIGH VOLTAGE SWITCHING APPLICATION. B D FEATURES High Breakdown Voltage VCEO=150V(Min.). DIM MILLIMETERS P Low Output Capacitance Cob=5.0pF(Max.). DEPTH 0.2 A 7.20 MAX High Transition Frequency fT=120MHz(Typ.). B 5.20 MAX C C 0.60 MAX S D 2.50 MAX Q E 1.15 MA

SEMICONDUCTOR KTC3229 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR COLOR TV CHROMA OUTPUT APPLICATION. A C FEAUTRES DIM MILLIMETERS S High Voltage VCEO=300V. _ A 10.0 + 0.3 _ + B 15.0 0.3 E Small Collector Output Capacitance Cob=4.0pF(Max.). C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L MA

SEMICONDUCTOR KTC3245 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. B C FEATURES High Breakdown Voltage. Collector Power Dissipation PC=625mW. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 VCBO Collector-Base Voltage 400 V H 0.45 _ H J 14.00

KTC3205 TRANSISTOR (NPN) TO-92L 1. EMITTER FEATURES 2. COLLECTOR Complementary to KTA1273 3. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector Power Dissipation 1 W TJ Juncti

KTC3265 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE 2. EMITTER High DC current gain 3. COLLECTOR Complementary to KTA1298 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 800 mA PC Collector Power Dissipat

KTC3203(NPN) TO-92 Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Complementary to KTA1271 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 800 mA PC 625 mW Collector Power Dissipation Dimen

KTC3205 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.100 1 Features 7.800 8.200 Complementary to KTA1273 0.600 0.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 0.350 0.550 13.800 VCBO Collector-Base Voltage 30 V 14.200 VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collec

KTC3202(NPN) TO-92 Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features General purpose application switching application MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC 625 mW Collector Po

KTC3265 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High DC current gain hFE=100-320 Complementary to KTA1298 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collec

KTC3206 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 5.100 2 3 1 Features 7.800 High Breakdown Voltage VCEO=150V(Min.) 8.200 Low Output Capacitance Cob=5.0pF(Max.) 0.600 High Transition Frequency fT=120MHz(Typ.). 0.800 0.350 0.550 MAXIMUM RATINGS (TA=25 unless otherwise noted) 13.800 14.200 Symbol Value Units Parameter

KTC3265 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage 30 VCEO V VCBO Collector-Base Voltage 35 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 800 mA Total Device Dissipation PD 200 mW TA=25 C Tj C Junction Temperature +150 Tstg Storage Temperature -55 t

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3265 TRANSISTOR (NPN) FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emit

KTC3200 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features h , FE Low noise, high hFE, high breakdown voltage. / Applications Low noise audio amplifier application. / Equivalent Ci

KTC3228 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features KTA1275 High voltage, complementary to KTA1275. / Applications , Color TV vertical deflection output, color TV class B s

DIP Type Transistors NPN Transistors KTC3202 Unit mm TO-92 4.8 0.3 3.8 0.3 Features Excellent hFE Linearity Complementary to KTA1270 0.60 Max 0.45 0.1 0.5 2 1 3 1.Emitter 2.Collector 1.27 2.54 3.Base Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter Voltage VCEO 30 V Emitter -

DIP Type Transistors NPN Transistors KTC3209 TO-92L Unit mm 4.9 0.2 0.7 0.1 Features Low Saturation Voltage 0.45 0.1 High Speed Switching Time Complementary to KTA1281 2 1 3 1.27 2.54 0.1 1.60 (max) Emitter 1. 2.Collector 3.Base 4.0(min) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50

SMD Type Transistors NPN Transistors KTC3265 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High DC Current Gain Low Saturation Voltage 1 2 Small Package +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 Complementary to KTA1298 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Vol

DIP Type Transistors NPN Transistors KTC3206 TO-92L Unit mm 4.9 0.2 Features 0.7 0.1 High Breakdown Voltage High Transition Frequency 0.45 0.1 Complementary to KTA1024 2 1 3 1.27 2.54 0.1 1.60 (max) Emitter 1. 2.Collector 3.Base 4.0(min) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 200

Plastic-Encapsulate Transistors FEATURES High DC current gain KTC3265(NPN) Complementary to KTA1298 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC 1. BASE Collector Current -Continuous 800 mA Collector Power Dissipation PC 200 mW 2. EMITTER SOT-23 3.

isc Silicon NPN Power Transistor KTC3229 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV chroma output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN