KTC3266 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTC3266TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORPOWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION.B CFEATURES Low Saturation Voltage. : VCE(sat)=0.5V(Max.) at IC=2AN DIM MILLIMETERS Complementary to KTA1296. A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )H 0.45_HJ 14.00 + 0.50CHARACTE

KTC3265 0.8A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE A High DC current gain L Complementary to KTA1298 33Top View C B11 22K ECLASSIFICATION OF hFE DProduct-Rank KTC3265-O KTC3265-Y H JF GRange 100~200 160~320 Marking Code EO EY

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3265 TRANSISTOR (NPN) FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO E

SEMICONDUCTOR KTC3265TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. EL B LFEATURES DIM MILLIMETERS High DC Current Gain : hFE=100 320. _+2.93 0.20AB 1.30+0.20/-0.15 Low Saturation VoltageC 1.30 MAX2: VCE(sat)=0.4V(Max.) (IC=500mA, IB=20mA). 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20 Suitable f

KTC3265 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE 2. EMITTER High DC current gain 3. COLLECTOR Complementary to KTA1298 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 800 mA PC Collector Power Dissipat

KTC3265 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features High DC current gain: hFE=100-320 Complementary to KTA1298 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 V IC Collec

KTC3265NPN General Purpose Transistors3P b Lead(Pb)-Free12SOT-23MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter Voltage30VCEOVVCBOCollector-Base Voltage 35 VVEBOEmitter-Base Voltage 5.0 VICCollector Current - Continuous 800 mATotal Device DissipationPD200 mWTA=25CTj CJunction Temperature +150TstgStorage Temperature -55 t

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3265 TRANSISTOR (NPN) FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO Emit

SMD Type TransistorsNPN TransistorsKTC3265SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features High DC Current Gain Low Saturation Voltage1 2 Small Package+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.1 Complementary to KTA12981.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Vol

Plastic-Encapsulate TransistorsFEATURESHigh DC current gainKTC3265(NPN)Complementary to KTA1298MAXIMUM RATINGS (TA=25 unless otherwise noted)Parameter Symbol Value UnitVCBOCollector-Base Voltage 35 VVCEOCollector-Emitter Voltage 30 VVEBOEmitter-Base Voltage 5 VIC 1. BASECollector Current -Continuous 800 mACollector Power Dissipation PC 200 mW 2. EMITTER SOT-233.