KTC3266 Todos los transistores

SEMICONDUCTOR KTC3266 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. B C FEATURES Low Saturation Voltage. VCE(sat)=0.5V(Max.) at IC=2A N DIM MILLIMETERS Complementary to KTA1296. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00 + 0.50 CHARACTE

KTC3265 0.8A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE A High DC current gain L Complementary to KTA1298 3 3 Top View C B 1 1 2 2 K E CLASSIFICATION OF hFE D Product-Rank KTC3265-O KTC3265-Y H J F G Range 100 200 160 320 Marking Code EO EY

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3265 TRANSISTOR (NPN) FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO E

SEMICONDUCTOR KTC3265 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS High DC Current Gain hFE=100 320. _ + 2.93 0.20 A B 1.30+0.20/-0.15 Low Saturation Voltage C 1.30 MAX 2 VCE(sat)=0.4V(Max.) (IC=500mA, IB=20mA). 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Suitable f

KTC3265 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE 2. EMITTER High DC current gain 3. COLLECTOR Complementary to KTA1298 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 800 mA PC Collector Power Dissipat

KTC3265 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High DC current gain hFE=100-320 Complementary to KTA1298 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collec

KTC3265 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage 30 VCEO V VCBO Collector-Base Voltage 35 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 800 mA Total Device Dissipation PD 200 mW TA=25 C Tj C Junction Temperature +150 Tstg Storage Temperature -55 t

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3265 TRANSISTOR (NPN) FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emit

SMD Type Transistors NPN Transistors KTC3265 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High DC Current Gain Low Saturation Voltage 1 2 Small Package +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 Complementary to KTA1298 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Vol

Plastic-Encapsulate Transistors FEATURES High DC current gain KTC3265(NPN) Complementary to KTA1298 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC 1. BASE Collector Current -Continuous 800 mA Collector Power Dissipation PC 200 mW 2. EMITTER SOT-23 3.