KTC3503 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTC3503TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH-DEFINITION CRT DISPLAY, ABVIDEO OUTPUT APPLICATIONS.DCEFEATURESFHigh breakdown voltage : VCEO 300V.Small reverse transfer capacitance and Gexcellent high frequency characteristic. H: Cre=1.8pF (VCB=30V, f=1MHz)DIM MILLIMETERSJA 8.3 MAXComplementary KTA1381.KB 5.8LC 0.7_+D

SEMICONDUCTOR KTC3502TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH-DEFINITION CRT DISPLAYABVIDEO OUTPUT APPLICATION.DCEFEATURESFHigh Voltage : VCEO=200V.High Transition Frequency : fT=150MHz(Typ.).GLow Collector Output Capacitance : Cob=1.7pF(Typ.).HDIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1MAXIMUM RATING (Ta=25 )E 3.5_+F

SEMICONDUCTOR KTC3553TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS AND STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1High Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3Ultrasmall-Sized Package permit

SEMICONDUCTOR KTC3541TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS AND STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1Large Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High Speed Switching._F 1.

SEMICONDUCTOR KTC3544TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS AND STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1Large Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High Speed Switching._F 1.

SEMICONDUCTOR KTC3572TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORFEATURELow Collector-Emitter Saturation Voltage VCE(sat).High Collector Current Capability : IC and ICP.B DHigher Efficiency Leading to Less Heat Generation.DIM MILLIMETERSA 7.20 MAXB 5.20 MAXC 0.60 MAXPD 2.50 MAXMAXIMUM RATING (Ta=25 ) DEPTH:0.2E 1.15 MAXF 1.27CCHARACTERISTIC SYMBOL RATING UNIT

SEMICONDUCTOR KTC3536TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS AND STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1High Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High Speed Switching._F 1.9

SEMICONDUCTOR KTC3535TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS AND STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1High Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High Speed Switching._F 1.9

SEMICONDUCTOR KTC3551TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1Large Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High-Speed Switching._F 1.9 + 0.21

SEMICONDUCTOR KTC3531TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW FREQUENCY POWER AMP, CONVERTERELECTRONIC GOVERNOR APPLICATIONS EBFEATURES KDIM MILLIMETERSLow Saturation Voltage _A 2.9 + 0.2B 1.6+0.2/-0.1: VCE(sat)=0.3V(Max.) at IC=0.5A._C 0.70 + 0.0523Complementary to KTA1531T. _D 0.4 + 0.1E 2.8+0.2/-0.3_F 1.9 + 0.21G 0.95_H 0.16 + 0.05

SEMICONDUCTOR KTC3552TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORDC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS, STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of FBET, MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1High Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3Hig

SEMICONDUCTOR KTC3544STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS AND STROBES APPLICATION.FEATURESEAdoption of MBIT Processes.L B LDIM MILLIMETERSLarge Current Capacitance._+A 2.93 0.20B 1.30+0.20/-0.15Low Collector-to-Emitter Saturation Voltage.C 1.30 MAX2High Speed Switching. 3 D 0.40+0.15/-0.05E 2.40+0.30

SEMICONDUCTOR KTC3542TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS, STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1Large Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High-Speed Switching._F 1.9 +

SEMICONDUCTOR KTC3543TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS, STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1High Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High-Speed Switching._F 1.9 +

SEMICONDUCTOR KTC3571STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORFEATURELow Collector-Emitter Saturation Voltage VCE(sat).EHigh Collector Current Capability : IC and ICP.L B LHigher Efficiency Leading to Less Heat Generation.DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05MAXIMUM RATING (Ta=25)E 2.40+0.30/-0.201G 1.90

SEMICONDUCTOR KTC3532TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1Large Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High-Speed Switching._F 1.9 + 0.21

SMD Type TransistorsNPN TransistorsKTC3551TSOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Adoption of MBIT Processes. Large Current Capacitance. 1 2+0.1+0.050.95 -0.1 0.1 -0.01 Low Collector-to-Emitter Saturation Voltage.1.9+0.1-0.1 High-Speed Switching. High Allowable Power Dis sipation.1.Base Complementary to KTA1551T. 2.