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KTC3531T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KTC3531T
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.9 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 180 MHz
   Capacitancia de salida (Cc): 15 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: TSM
 

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KTC3531T Datasheet (PDF)

 ..1. Size:39K  kec
 ktc3531t.pdf pdf_icon

KTC3531T

SEMICONDUCTOR KTC3531TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW FREQUENCY POWER AMP, CONVERTERELECTRONIC GOVERNOR APPLICATIONS EBFEATURES KDIM MILLIMETERSLow Saturation Voltage _A 2.9 + 0.2B 1.6+0.2/-0.1: VCE(sat)=0.3V(Max.) at IC=0.5A._C 0.70 + 0.0523Complementary to KTA1531T. _D 0.4 + 0.1E 2.8+0.2/-0.3_F 1.9 + 0.21G 0.95_H 0.16 + 0.05

 8.1. Size:90K  kec
 ktc3536t.pdf pdf_icon

KTC3531T

SEMICONDUCTOR KTC3536TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS AND STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1High Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High Speed Switching._F 1.9

 8.2. Size:89K  kec
 ktc3535t.pdf pdf_icon

KTC3531T

SEMICONDUCTOR KTC3535TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS AND STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1High Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High Speed Switching._F 1.9

 8.3. Size:89K  kec
 ktc3532t.pdf pdf_icon

KTC3531T

SEMICONDUCTOR KTC3532TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1Large Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High-Speed Switching._F 1.9 + 0.21

MOSTRAR MÁS

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP42C , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: FXT56SM | BFQ193

 

 
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