KTC3532T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTC3532T 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.9 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 210 MHz
Capacitancia de salida (Cc): 20 pF
Ganancia de corriente contínua (hFE): 200
Encapsulados: TSM
📄📄 Copiar
Búsqueda de reemplazo de KTC3532T
- Selecciónⓘ de transistores por parámetros
KTC3532T datasheet
ktc3532t.pdf
SEMICONDUCTOR KTC3532T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 Large Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 High-Speed Switching. _ F 1.9 + 0.2 1
ktc3536t.pdf
SEMICONDUCTOR KTC3536T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 High Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 High Speed Switching. _ F 1.9
ktc3535t.pdf
SEMICONDUCTOR KTC3535T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 High Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 High Speed Switching. _ F 1.9
ktc3531t.pdf
SEMICONDUCTOR KTC3531T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY POWER AMP, CONVERTER ELECTRONIC GOVERNOR APPLICATIONS E B FEATURES K DIM MILLIMETERS Low Saturation Voltage _ A 2.9 + 0.2 B 1.6+0.2/-0.1 VCE(sat)=0.3V(Max.) at IC=0.5A. _ C 0.70 + 0.05 2 3 Complementary to KTA1531T. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 _ F 1.9 + 0.2 1 G 0.95 _ H 0.16 + 0.05
Otros transistores... KTC3209, KTC3210, KTC3245, KTC3266, KTC3423, KTC3502, KTC3503, KTC3531T, 2N3904, KTC3535T, KTC3536T, KTC3541T, KTC3542T, KTC3543T, KTC3544T, KTC3551T, KTC3553T
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
kn2907a | ncep028n85 datasheet | sw50n06 | 2sa1232 | 2sc1940 | ftp08n06a | 2n3405 | 2n3567




