KTC3542T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KTC3542T
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.9 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 450 MHz
   Capacitancia de salida (Cc): 20 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: TSM

Búsqueda de reemplazo de transistor bipolar KTC3542T

KTC3542T Datasheet (PDF)

..1. Size:90K kec
ktc3542t.pdf

SEMICONDUCTOR KTC3542TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS, STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1Large Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High-Speed Switching._F 1.9 +

8.1. Size:90K kec
ktc3541t.pdf

SEMICONDUCTOR KTC3541TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS AND STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1Large Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High Speed Switching._F 1.

8.2. Size:85K kec
ktc3544t.pdf

SEMICONDUCTOR KTC3544TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS AND STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1Large Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High Speed Switching._F 1.

8.3. Size:576K kec
ktc3544s.pdf

SEMICONDUCTOR KTC3544STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS AND STROBES APPLICATION.FEATURESEAdoption of MBIT Processes.L B LDIM MILLIMETERSLarge Current Capacitance._+A 2.93 0.20B 1.30+0.20/-0.15Low Collector-to-Emitter Saturation Voltage.C 1.30 MAX2High Speed Switching. 3 D 0.40+0.15/-0.05E 2.40+0.30

8.4. Size:89K kec
ktc3543t.pdf

SEMICONDUCTOR KTC3543TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS, STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1High Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High-Speed Switching._F 1.9 +

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: FX5131

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