KTC3543T
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTC3543T
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.9
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 30
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 290
MHz
Capacitancia de salida (Cc): 40
pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta:
TSM
Búsqueda de reemplazo de transistor bipolar KTC3543T
KTC3543T
Datasheet (PDF)
..1. Size:89K kec
ktc3543t.pdf 
SEMICONDUCTOR KTC3543TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS, STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1High Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High-Speed Switching._F 1.9 +
8.1. Size:90K kec
ktc3541t.pdf
SEMICONDUCTOR KTC3541TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS AND STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1Large Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High Speed Switching._F 1.
8.2. Size:85K kec
ktc3544t.pdf
SEMICONDUCTOR KTC3544TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS AND STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1Large Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High Speed Switching._F 1.
8.3. Size:576K kec
ktc3544s.pdf
SEMICONDUCTOR KTC3544STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS AND STROBES APPLICATION.FEATURESEAdoption of MBIT Processes.L B LDIM MILLIMETERSLarge Current Capacitance._+A 2.93 0.20B 1.30+0.20/-0.15Low Collector-to-Emitter Saturation Voltage.C 1.30 MAX2High Speed Switching. 3 D 0.40+0.15/-0.05E 2.40+0.30
8.4. Size:90K kec
ktc3542t.pdf
SEMICONDUCTOR KTC3542TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS, STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1Large Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High-Speed Switching._F 1.9 +
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